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参数资料
| 型号： | 0910-300 |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | HERMETIC SEALED, 55KT, 2 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 123K |
| 代理商： | 0910-300 |
0910-300Rel 1
ADVANCED POWER TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT
VERSION PLEASE CHECK OUR WEB SITE
AT WWW. ADVANCEDPOWER.COM OR CONTACT OUR FACTORY DIRECT.
Advanced Power Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 /869-2324
Preliminary
GENERAL DESCRIPTION
The 0910-300 is an internally matched, COMMON BASE transistor capable of
providing 300 Watts of pulsed RF output power at fifty microseconds pulse
width, two percent duty factor across the band 870 to 1000 MHz. This
hermetically solder-sealed transistor is specifically designed for P-Band radar
applications. It utilizes gold metallization and diffused emitter ballasting to
provide high reliability and supreme ruggedness.
CASE OUTLINE
55KT, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25
oC
600 Watts
Maximum Voltage and Current
BVces
Collector to Emitter Voltage
60 Volts
BVebo
Emitter to Base Voltage
3.5 Volts
Ic
Collector Current
20 Amps
Maximum Temperatures
Storage Temperature
- 65 to + 200
oC
Operating Junction Temperature
+ 200
oC
ELECTRICAL CHARACTERISTICS @ 25
OC
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Pg
ηc
Rl
VSWR
1
VSWRs
Power Out
Power Gain
Collector Efficiency
Input Return loss
Load Mismatch Tolerance
Load Mismatch - Stability
Freq = 870 – 1000 MHz
Vcc = 50 Volts
Pin = 33 Watts
Pulse Width = 50
s
Duty Factor = 2%
300
9.6
40
9
45
400
3:1
2:1
Watts
dB
%
dB
Note 1: Pulse condition of 150
sec, 10%.
Bvces
Ices
Iebo
θjc1
Collector to Emitter Breakdown
Collector to Emitter Leakage
Emitter to Base Leakage
Thermal Resistance
Ic = 80 mA
Vce = 40 Volts
Vebo = 3.0 Volts
Rated Pulse Condition
65
10
5.0
0.29
Volts
mA
oC/W
Issue Mar 2005
0910– 300
300 Watts - 50 Volts, 50
s, 2%
Radar 870 - 1000 MHz
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 0910-300M | 制造商:Microsemi Corporation 功能描述:0910-300M - Bulk 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| 091032025TEG | 制造商:Micro Plastics Inc 功能描述: |
| 09103300007 | 制造商:Amphenol PCD 功能描述:RECTANGULAR - Bulk |
| 0910-3-50-00-00-00-11-0 | 功能描述:触点探头 STANDARD STROKE SMT RoHS:否 制造商:IDI 类型:Probes 尖端类型:Spherical Radius 长度:8.26 mm 电流额定值:10 A 弹力:2.3 oz 行程:1.52 mm 系列:101050 |
| 0910-3-50-20-75-14-11-0 | 制造商:Mill-Max Mfg Corp 功能描述:NA 制造商:Mill-Max Mfg Corp 功能描述:0910-3-50-20-75-14-11-0 |
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