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参数资料
| 型号： | 0912-25 |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | 功率晶体管 |
| 英文描述： | DME/TACAN 960-1215 MHz, Class C, Common Base, Pulsed; P(out) (W): 25; P(in) (W): 3.5; Gain (dB): 8.5; Vcc (V): 50; Pulse Width (µsec): 10; Duty Cycle (%): 1; Case Style: 55CT-1 |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | 55CX, 2 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 297K |
| 代理商： | 0912-25 |
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
0912-25
25 Watts, 50 Volts, Pulsed
Avionics 960 - 1215 MHz
GENERAL DESCRIPTION
The 0912-25 is a COMMON BASE bipolar transistor. It is designed for
pulsed systems in the frequency band 960-1215 MHz. The device has gold
thin-film metallization for proven highest MTTF. The transistor includes
input prematch for broadband capability. Low thermal resistance package
reduces junction temperature, extends life.
CASE OUTLINE
55CX, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C
125 Watts
o2
Maximum Voltage and Current
BVces
Collector to Base Voltage
60 Volts
BVebo
Emitter to Base Voltage
4.0 Volts
Ic
Collector Current
2.5 Amps
Maximum Temperatures
Storage Temperature
- 65 to + 150 C
o
Operating Junction Temperature
+ 200 C
o
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Pin
Pg
η
c
VSWR
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F = 960-1215 MHz
Vcc = 50 Volts
PW = 10
sec
DF = 1 %
F = 1090 MHz
25
8.5
10
45
3.5
10:1
Watts
dB
%
BVebo
BVces
Cob
hFE
θjc2
Emitter to Base Breakdown
Collector to Emitter Breakdown
Capacitance Collector to Base
DC - Current Gain
Thermal Resistance
Ie = 25 mA
Ic = 75 mA
Vcb = 50 Volts
Ic =300 mA, Vce =5 V
4.0
55
10
14
17
1.4
Volts
pF
C/W
o
Note 1: At rated output power and pulse conditions.
2: At rated pulse conditions
Initial Issue June 1, 1994
相关PDF资料 |
PDF描述 |
|---|---|
| 0912-25 | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 0912-45 | DME/TACAN 960-1215 MHz, Class C, Common Base, Pulsed; P(out) (W): 45; P(in) (W): 7; Gain (dB): 8; Vcc (V): 50; Pulse Width (µsec): 10; Duty Cycle (%): 1; Case Style: 55CT-1 |
| 0912-45 | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 0912-7 | Intemally Matched, Common Base Transistor |
| 0912-7 | DME/TACAN 960-1215 MHz, Class C, Common Base, Pulsed; P(out) (W): 7; P(in) (W): 1; Gain (dB): 8.5; Vcc (V): 50; Pulse Width (µsec): 10; Duty Cycle (%): 1; Case Style: 55CT-1 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 0912260001 | 制造商:Molex 功能描述:CONN IDC CONN IDT CBL MNT - Bulk |
| 0912260004 | 制造商:Molex 功能描述:3CT UF B-IN CONN 912260004 - Bulk |
| 0912260008 | 制造商:Molex 功能描述:CONN IDC CONN IDT CBL MNT - Bulk |
| 0912260016 | 制造商:Molex 功能描述:CONN IDC CONN IDT CBL MNT - Bulk |
| 0912260024 | 制造商:Molex 功能描述:2.50MM UF CONN B-IN IDT KEY3 8CKT - Bulk |
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