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参数资料
| 型号： | 0912-7 |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | 55CX, 2 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 330K |
| 代理商： | 0912-7 |
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE
THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE
PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
0912-7
7 Watts, 50 Volts, Pulsed
Avionics 960 - 1215 MHz
GENERAL DESCRIPTION
CASE OUTLINE
The 0912-7 is a COMMON BASE bipolar transistor. It is designed for
pulsed systems in the frequency band 960-1215 MHz. The transistor
includes input prematch for broadband capability. The device has gold thin-
film metallization for proven highest MTTF. Low thermal resistance
package reduces junction temperature, extends life.
55CX, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C
50 Watts
o2
Maximum Voltage and Current
BVces
Collector to Emitter Voltage
60 Volts
BVebo
Emitter to Base Voltage
4.0 Volts
Ic
Collector Current
1.0 Amps
Maximum Temperatures
Storage Temperature
- 65 to + 150 C
o
Operating Junction Temperature
+ 200 C
o
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL
CHARACTERISTICS
TEST
MIN
TYP
MAX
UNITS
CONDITIONS
Pout
Pin
Pg
η
c
VSWR
Power Out
F = 960-1215 MHz
7
Watts
Power Input
Vcc = 50 Volts
1
Watts
Power Gain
8.5
d B
Collector Efficiency (1090 MHz)
40
%
Load Mismatch Tolerance
10:1
PW = 10
sec
DF =1%
F = 1090 MHz
BVebo
BVces
Cob
hFE
θjc 2
Emitter to Base Breakdown
Ie = 10 mA
4
Volts
Collector to Emitter Breakdown
Ic = 20 mA
60
Volts
Capacitance Collector to Base
Vcb = 50 V
6.5
8
pF
DC - Current Gain
Ic= 100 mA, Vcc= 5V
10
120
Thermal Resistance
3.5
C/W
o
Note1: At Rated Power Output and pulse conditions
.
2: At rated pulse conditions
Issue A February 20, 1998
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