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参数资料
| 型号： | 1.5KA22A-E3/91 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 封装： | PLASTIC, CASE 1.5KA, 2 PIN |
| 文件页数： | 3/5页 |
| 文件大小： | 339K |
| 代理商： | 1.5KA22A-E3/91 |
1.5KA6.8 thru 1.5KA47A
Document Number 88300
16-Aug-05
Vishay Semiconductors
www.vishay.com
3
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise noted)
Figure 1. Peak Pulse Power Rating Curve
Figure 2. Pulse Power or Current versus Initial Junction
Temperature
Figure 3. Pulse Waveform
0.1
1.0
10
100
Non-repetitive Pulse
Waveform shown in Fig. 3
TA = 25 °C
0.1 s
1.0 s
10 s
100 s
1.0 s
10 s
td - Pulse Width (sec.)
P
PPM
-
P
e
ak
P
u
lse
P
o
w
er
(k
W
)
0
25
50
75
100
0
75
25
50
100
125
150
175
200
Peak
P
u
lse
Po
w
er
(P
PP
)o
rC
u
rrent
(I
PP
)
Derating
in
P
ercentage,
%
TJ - Initial Temperature (°C)
0
50
100
150
I PPM
-P
e
a
k
P
u
lse
C
u
rrent,
%
I RSM
Half Value - IPP
IPPM
2
td
10/1000
sec. Waveform
as defined by R.E.A.
0
1.0
2.0
3.0
4.0
t - Time (ms)
TJ = 25 °C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50 % of IPPM
tr = 10 sec.
Peak Value
IPPM
Figure 4. Typical Junction Capacitance Unidirectional
Figure 5. Power Derating Curve
Figure 6. Maximum Non-Repetitive/Peak Forward Surge Current
Measured at
Zero Bias
Measured at
Stand-Of
Voltage, VWM
TJ =25
°C
f = 1.0 MHz
Vsig = 50 mVp-p
10
1.0
100
V(BR) - Breakdown Voltage (V)
C
J
-J
u
nction
C
apacitance
(pF)
100
1000
10000
20000
0
1.25
2.5
3.75
5.0
0
75
25
100
125
150
175
200
50
P
D
,P
o
w
er
Dissipation
(
W
)
TL - Lead Temperature (°C)
L = 0.375” (9.5 mm)
Lead Lengths
60 Hz Resistive
or Inductive Load
1
10
100
I FSM
-P
e
a
kF
o
rw
ard
S
u
rge
C
u
rrent
(A)
Number of Cycles at 60HZ
10
100
200
TL = 75 °C
8.3 ms Single Half Sine-Wave
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