参数资料
| 型号： | 1.5KE9.1A |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/8页 |
| 文件大小： | 0K |
| 描述： | TVS 1500W 9.1V UNIDIRECT AXIAL |
| 产品变化通告： | Specification Update Storage Temp Range 14/Aug/2008 Product Obsolescence 06/Oct/2006 |
| 标准包装： | 500 |
| 系列： | Mosorb™ |
| 电压 - 反向隔离（标准值）： | 7.78V |
| 电压 - 击穿： | 8.65V |
| 功率（瓦特）： | 1500W |
| 电极标记： | 单向 |
| 安装类型： | 通孔 |
| 封装/外壳： | DO-201AD，轴向 |
| 供应商设备封装： | 轴向 |
| 包装： | 散装 |
| 其它名称： | 1.5KE9.1AOS |
1N6267A Series
ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted, V F = 3.5 V Max. @ I F (Note 3) = 100 A)
Device ?
JEDEC
Device ?
(Note 4)
V RWM
(Note 5)
(Volts)
I R @ V RWM
( m A)
Breakdown Voltage
V BR (Note 6) (Volts)
Min Nom Max
@ I T
(mA)
V C @ I PP (Note 7)
V C I PP
(Volts) (A)
Q V BR
(%/ ° C)
1.5KE6.8A, G
1.5KE7.5A, G
1.5KE8.2A, G
1.5KE9.1A, G
1.5KE10A, G
1.5KE11A, G
1.5KE12A, G
1.5KE13A, G
1.5KE15A, G
1.5KE16A, G
1.5KE18A, G
1.5KE20A, G
1N6267A, G
1N6268A, G
1N6269A, G
1N6270A, G
1N6271A, G
1N6272A, G
1N6273A, G
1N6274A, G
1N6275A, G
1N6276A, G
1N6277A, G
1N6278A, G
5.8
6.4
7.02
7.78
8.55
9.4
10.2
11.1
12.8
13.6
15.3
17.1
1000
500
200
50
10
5
5
5
5
5
5
5
6.45
7.13
7.79
8.65
9.5
10.5
11.4
12.4
14.3
15.2
17.1
19
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
7.14
7.88
8.61
9.55
10.5
11.6
12.6
13.7
15.8
16.8
18.9
21
10
10
10
1
1
1
1
1
1
1
1
1
10.5
11.3
12.1
13.4
14.5
15.6
16.7
18.2
21.2
22.5
25.2
27.7
143
132
124
112
103
96
90
82
71
67
59.5
54
0.057
0.061
0.065
0.068
0.073
0.075
0.078
0.081
0.084
0.086
0.088
0.09
1.5KE22A,
1.5KE24A,
1.5KE27A,
1.5KE30A,
G
G
G
G
1N6279A, G
1N6280A, G
1N6281A, G
1N6282A, G
18.8
20.5
23.1
25.6
5
5
5
5
20.9
22.8
25.7
28.5
22
24
27
30
23.1
25.2
28.4
31.5
1
1
1
1
30.6
33.2
37.5
41.4
49
45
40
36
0.092
0.094
0.096
0.097
1.5KE33A, G
1.5KE36A, G
1.5KE39A, G
1.5KE43A, G
1.5KE47A, G
1.5KE51A, G
1.5KE56A, G
1.5KE62A, G
1N6283A, G
1N6284A, G
1N6285A, G
1N6286A, G
1N6287A, G
1N6288A, G
1N6289A, G
1N6290A, G
28.2
30.8
33.3
36.8
40.2
43.6
47.8
53
5
5
5
5
5
5
5
5
31.4
34.2
37.1
40.9
44.7
48.5
53.2
58.9
33
36
39
43
47
51
56
62
34.7
37.8
41
45.2
49.4
53.6
58.8
65.1
1
1
1
1
1
1
1
1
45.7
49.9
53.9
59.3
64.8
70.1
77
85
33
30
28
25.3
23.2
21.4
19.5
17.7
0.098
0.099
0.1
0.101
0.101
0.102
0.103
0.104
1.5KE68A,
1.5KE75A,
1.5KE82A,
1.5KE91A,
G
G
G
G
1N6291A, G
1N6292A, G
1N6293A, G
1N6294A, G
58.1
64.1
70.1
77.8
5
5
5
5
64.6
71.3
77.9
86.5
68
75
82
91
71.4
78.8
86.1
95.5
1
1
1
1
92
103
113
125
16.3
14.6
13.3
12
0.104
0.105
0.105
0.106
1.5KE100A, G
1.5KE110A, G
1.5KE120A, G
1.5KE130A, G
1N6295A, G
1N6296A, G
1N6297A, G
1N6298A, G
85.5
94
102
111
5
5
5
5
95
105
114
124
100
110
120
130
105
116
126
137
1
1
1
1
137
152
165
179
11
9.9
9.1
8.4
0.106
0.107
0.107
0.107
1.5KE150A,
1.5KE160A,
1.5KE170A,
1.5KE180A,
G
G
G
G
1N6299A, G
1N6300A, G
1N6301A, G
1N6302A, G*
128
136
145
154
5
5
5
5
143
152
162
171
150
160
170
180
158
168
179
189
1
1
1
1
207
219
234
246
7.2
6.8
6.4
6.1
0.108
0.108
0.108
0.108
1.5KE200A, G
1.5KE220A, G
1.5KE250A, G
1N6303A, G
171
185
214
5
5
5
190
209
237
200
220
250
210
231
263
1
1
1
274
328
344
5.5
4.6
5
0.108
0.109
0.109
Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value.
3. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
4. Indicates JEDEC registered data
5. A transient suppressor is normally selected according to the maximum working peak reverse voltage (V RWM ), which should be equal to or
greater than the dc or continuous peak operating voltage level.
6. V BR measured at pulse test current I T at an ambient temperature of 25 ° C
7. Surge current waveform per Figure 5 and derate per Figures 1 and 2.
?The “G” suffix indicates Pb?Free package available.
*Not Available in the 1500/Tape & Reel
http://onsemi.com
3
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