参数资料
| 型号： | 1.5SMC82AT3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | TVS 1500W 82V UNIDIRECT SMC |
| 标准包装： | 2,500 |
| 电压 - 反向隔离（标准值）： | 70.1V |
| 电压 - 击穿： | 77.9V |
| 功率（瓦特）： | 1500W |
| 电极标记： | 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | DO-214AB，SMC |
| 供应商设备封装： | SMC |
| 包装： | 带卷 (TR) |
1.5SMC6.8AT3G Series, SZ1.5SMC6.8AT3G Series
MAXIMUM RATINGS
Rating
Peak Power Dissipation (Note 1) @ T L = 25 ° C, Pulse Width = 1 ms
DC Power Dissipation @ T L = 75 ° C
Measured Zero Lead Length (Note 2)
Derate Above 75 ° C
Thermal Resistance, Junction ? to ? Lead
DC Power Dissipation (Note 3) @ T A = 25 ° C
Derate Above 25 ° C
Thermal Resistance from Junction ? to ? Ambient
Forward Surge Current (Note 4) @ T A = 25 ° C
Operating and Storage Temperature Range
Symbol
P PK
P D
R q JL
P D
R q JA
I FSM
T J , T stg
Value
1500
4.0
54.6
18.3
0.75
6.1
165
200
? 65 to +150
Unit
W
W
mW/ ° C
° C/W
W
mW/ ° C
° C/W
A
° C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. 10 X 1000 m s, non ? repetitive
2. 1 in. square copper pad, FR ? 4 board
3. FR ? 4 board, using ON Semiconductor minimum recommended footprint, as shown in 403 case outline dimensions spec.
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless
otherwise noted, V F = 3.5 V Max. @ I F (Note 5) = 100 A)
Symbol Parameter
I PP
Maximum Reverse Peak Pulse Current
V C
Clamping Voltage @ I PP
I F
I
I R V F
V RWM
I R
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V RWM
V C V BR V RWM
I T
V
V BR
I T
Breakdown Voltage @ I T
Test Current
Q V BR
I F
V F
Maximum Temperature Coefficient of V BR
Forward Current
Forward Voltage @ I F
I PP
Uni ? Directional TVS
5. 1/2 sine wave or equivalent, PW = 8.3 ms non ? repetitive duty
cycle
http://onsemi.com
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