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参数资料
| 型号： | 10DL2C41A |
| 元件分类： | 整流器 |
| 英文描述： | 10 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | LEAD FREE, 12-10E1A, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 216K |
| 代理商： | 10DL2C41A |
10DL2C41A
2006-11-08
1
Unit: mm
TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE
10DL2C41A
SWITCHING MODE POWER SUPPLY APPLICATIONS
CONVERTER & CHOPPER APPLICATION
Repetitive Peak Reverse Voltage
: VRRM = 200 V
Average Output Rectified Current
: IO = 10 A
Ultra Fast ReverseRecovery Time : trr = 35 ns
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak Reverse Voltage
VRRM
200
V
Average Output Rectified Current
(Tc = 116°C)
IO
10
A
Peak One Cycle Surge Forward
Current (Non Repetitive)
IFSM
50 (50Hz)
A
Junction Temparature
Tj
40~150
°C
Storage Temparature Range
Tstg
40~150
°C
Screw Torque
―
0.6
N m
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
TYP.
MAX
UNIT
Peak Forward Voltage
(Note 1)
VFM
IFM = 5A
―
0.98
V
Repetitive Peak Reverse Current
(Note 1)
IRRM
VRRM = 200V
―
10
A
Reverse Recovery time
(Note 1)
trr
IF = 2A, di / dt = 20A / s
―
35
ns
Forward Recovery time
(Note 1)
tfr
IF = 1.0A
―
100
ns
Thermal Resistance
Rth (jc)
Total DC, Junction to Case
―
3.0
°C / W
Note 1: A value applied to one cell.
POLARITY
JEDEC
TO220AB
JEITA
―
TOSHIBA
1210E1A
Weight: 2.0g
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