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参数资料
| 型号： | 10ETS16FP |
| 元件分类： | 整流器 |
| 英文描述： | 10 A, 1600 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 文件页数： | 2/6页 |
| 文件大小： | 89K |
| 代理商： | 10ETS16FP |
2
10ETS..FP
SAFEIR Series
Preliminary Data Sheet I2142 rev. A 03/99
www.irf.com
I
F(AV)
Max.AverageForwardCurrent
10
A
@ T
C
=105°C,180°conductionhalfsinewave
I
FSM
Max.PeakOneCycleNon-Repetitive
170
10msSinepulse,ratedV
RRMapplied
SurgeCurrent
200
10msSine pulse,novoltagereapplied
I2t
Max.I2tforfusing
130
10ms Sine pulse, rated V
RRM applied
145
10ms Sine pulse, no voltage reapplied
I
2√t Max. I2√t for fusing
1450
A
2√s
t = 0.1 to 10ms, no voltage reapplied
Part Number
V
RRM
, maximum
V
RSM
, maximum non repetitive
I
RRM
peak reverse voltage
150°C
VV
mA
10ETS08FP
800
900
0.5
10ETS12FP
1200
1300
10ETS16FP
1600
1700
Voltage Ratings
T
J
Max. Junction Temperature Range
-40to150
°C
T
stg
Max. Storage Temperature Range
-40to150
°C
R
thJC
Max. Thermal Resistance Junction
2.5
°C/W
DC operation
to Case
R
thJA
Max. Thermal Resistance Junction
62
°C/W
to Ambient
R
thCS
Typical Thermal Resistance, Case to
0.5
°C/W
Mounting surface , smooth and greased
Heatsink
wt
Approximate Weight
2(0.07)
g(oz.)
T
Mounting Torque
Min.
6(5)
Max.
12(10)
Case Style
TO-220FULLPAK
(94/V0)
Thermal-Mechanical Specifications
Parameters
10ETS..FP Units
Conditions
Kg-cm
(Ibf-in)
Absolute Maximum Ratings
Electrical Specifications
Parameters
10ETS..FP
Units
Conditions
A
A2s
V
FM
Max. Forward Voltage Drop
1.1
V
@ 10A,T
J
= 25°C
r
t
Forward slope resistance
20
m
VF(TO) Threshold voltage
0.82
V
I
RM
Max. Reverse Leakage Current
0.05
T
J
= 25 °C
0.50
TJ = 150 °C
Parameters
10ETS..FP Units
Conditions
T
J
= 150°C
V
R
= rated V
RRM
mA
Provide terminal coating for voltages above 1200V
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