参数资料
型号: 10MQ040NTR
元件分类: 整流器
英文描述: 1.5 A, 40 V, SILICON, RECTIFIER DIODE
封装: SMA, SIMILAR TO D-64, 2 PIN
文件页数: 2/7页
文件大小: 163K
代理商: 10MQ040NTR
10MQ040NPbF
Bulletin PD-20772 rev. A 07/04
2
www.irf.com
V
FM
Max. Forward Voltage Drop
(1)
0.54
V
@ 1A
* See Fig. 1
0.62
V
@ 1.5A
0.49
V
@ 1A
0.56
V
@ 1.5A
I
RM
Max. Reverse Leakage Current (1)
0.5
mA
T
J =
25 °C
* See Fig. 2
26
mA
T
J = 125 °C
V
F(TO) Threshold Voltage
0.36
V
T
J = TJ max.
r
t
Forward Slope Resistance
104
m
C
T
Typical Junction Capacitance
38
pF
V
R = 10VDC, TJ = 25°C, test signal = 1Mhz
L
S
Typical Series Inductance
2.0
nH
Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change
10000
V/s
(Rated VR)
Part number
10MQ040NPbF
VR
Max. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V)
40
Voltage Ratings
Absolute Maximum Ratings
T
J =
25 °C
T
J = 125 °C
V
R = rated VR
Electrical Specifications
Parameters
10MQ Units
Conditions
(1) Pulse Width < 300s, Duty Cycle < 2%
T
J
Max. Junction Temperature Range (*) - 55 to 150
°C
T
stg
Max. Storage Temperature Range
- 55 to 150
°C
R
thJA Max. Thermal Resistance Junction
80
°C/W DC operation
to Ambient
wt
Approximate Weight
0.07(0.002) g (oz.)
Case Style
SMA
Similar D-64
Device Marking
IR1F
Thermal-Mechanical Specifications
Parameters
10MQ Units
Conditions
I
F(AV) Max. Average Forward Current
1.5
A
50% duty cycle @ TL = 123 °C, rectangular wave form.
* See Fig. 4
OnPCboard9mm2island(.013mmthickcopperpad area)
I
FSM
Max. Peak One Cycle Non-Repetitive
120
5s Sine or 3s Rect. pulse
Surge Current * See Fig. 6
30
10ms Sine or 6ms Rect. pulse
E
AS
Non-Repetitive Avalanche Energy
3.0
mJ
T
J = 25 °C, IAS = 1A, L = 6mH
I
AR
Repetitive Avalanche Current
1.0
A
Parameters
10MQ Units
Conditions
A
Following any rated
load condition and
with rated V
RRM applied
<
thermal runaway condition for a diode on its own heatsink
(*) dPtot
1
dTj
Rth( j-a)
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