参数资料
型号: 110MT160KB
元件分类: 桥式整流
英文描述: 3 PHASE, 110 A, 1600 V, SILICON, BRIDGE RECTIFIER DIODE
封装: INT-A-PAK-6
文件页数: 6/7页
文件大小: 95K
代理商: 110MT160KB
90-110MT..KB Series
6
Bulletin I27501 rev. A 05/03
www.irf.com
Fig. 8 - Total Power Loss Characteristics
Fig. 9 - Maximum Non-Repetitive Surge Current
Fig. 10 - Maximum Non-Repetitive Surge Current
200
300
400
500
600
700
800
900
110
100
P
e
a
k
H
a
lf
S
in
e
W
a
v
e
F
o
rwa
rd
C
u
rre
n
t
(A
)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
110MT..KB Series
Initial T = 150°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
At Any Rated Load Condition And With
Rated V
Applied Following Surge.
RRM
J
200
300
400
500
600
700
800
900
1000
0.01
0.1
1
Pe
ak
H
a
lf
S
in
e
W
a
v
e
Fo
rw
ar
d
C
u
rre
n
t
(A
)
Pulse Train Duration (s)
110MT..KB Series
Initial T = 150°C
No Voltage Reapplied
Rated V
Reapplied
RRM
Versus Pulse Train Duration.
Maximum Non Repetitive Surge Current
J
025
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C)
1.5 K/W
1 K/W
0.7 K/W
0.5
K/W
0.4
K/W
0.3
K/W
0.2
K/W
0.1
2
K/W
R
=
0.0
5
K
/W
-
D
elt
a
R
th
S
A
0
50
100
150
200
250
300
350
400
450
0
25
50
75
100
125
150
Total Output Current (A)
Max
imu
m
T
ot
a
l
Po
we
r
Los
s
(W)
120°
(Rect)
110MT..KB Series
T= 150°C
J
Fig. 11 - Thermal Impedance Z
thJC
Characteristic
0.01
0.1
1
10
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
th
J
C
Tr
a
n
si
e
n
t
T
her
m
a
l
Im
p
e
dan
c
e
Z
(K
/W
)
90MT..KB Series
110MT..KB Series
Per Junction
Steady State Value
R= 1.26 K/W
R= 1.07 K/W
(DC Operation)
thJC
相关PDF资料
PDF描述
1N825A136 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-34
1N825136 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-34
1N823A116 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-34
1N829A113 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-34
1N829A143 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-34
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