参数资料
| 型号： | 11LC040-I/MS |
| 厂商： | Microchip Technology |
| 文件页数： | 16/44页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 4KBIT 100KHZ 8MSOP |
| 标准包装： | 100 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 4K (512 x 8) |
| 速度： | 100kHz |
| 接口： | UNI/O?（单线） |
| 电源电压： | 2.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-TSSOP，8-MSOP（0.118"，3.00mm 宽） |
| 供应商设备封装： | 8-MSOP |
| 包装： | 管件 |
| 产品目录页面： | 1443 (CN2011-ZH PDF) |
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11AAXXX/11LCXXX
4.7 Erase All ( ERAL ) Instruction
The ERAL instruction allows the user to write ‘0x00’ to
the entire memory array with one command. Note that
the write enable latch (WEL) must first be set by issuing
the WREN instruction.
Once the write enable latch is set, the user may pro-
ceed with issuing a ERAL instruction (including the
header and device address bytes). Immediately after
the NoMAK bit has been transmitted by the master, the
internal write cycle is initiated, during which time all
words of the memory array are written to ‘0x00’.
The ERAL instruction is ignored if either of the Block
Protect bits (BP0, BP1) are not 0, meaning 1/4, 1/2, or
all of the array is protected.
Note: The ERAL instruction must be termi-
nated with a NoMAK following the com-
mand byte. If a NoMAK is not received at
this point, the command will be consid-
ered invalid, and the device will go into
Idle mode without responding with a
SAK or executing the command.
FIGURE 4-8:
ERASE ALL COMMAND SEQUENCE
SCIO
SCIO
Standby Pulse
Command
0 1 1 0 1 1 0 1
Start Header
0 1 0 1 0 1 0 1
Twc
Device Address
1 0 1 0 0 0 0 0 (1)
Note 1: For the 11XXXX1, this bit must be a ‘ 1 ’.
4.8 Set All ( SETAL ) Instruction
The SETAL instruction allows the user to write ‘0xFF’
to the entire memory array with one command. Note
that the write enable latch (WEL) must first be set by
issuing the WREN instruction.
Once the write enable latch is set, the user may pro-
ceed with issuing a SETAL instruction (including the
header and device address bytes). Immediately after
the NoMAK bit has been transmitted by the master, the
internal write cycle is initiated, during which time all
words of the memory array are written to ‘0xFF’ .
The SETAL instruction is ignored if either of the Block
Protect bits (BP0, BP1) are not 0, meaning 1/4, 1/2, or
all of the array is protected.
Note: The SETAL instruction must be termi-
nated with a NoMAK following the com-
mand byte. If a NoMAK is not received at
this point, the command will be consid-
ered invalid, and the device will go into
Idle mode without responding with a
SAK or executing the command.
FIGURE 4-9:
SET ALL COMMAND SEQUENCE
SCIO
SCIO
Standby Pulse
Command
0 1 1 0 0 1 1 1
Start Header
0 1 0 1 0 1 0 1
Twc
Device Address
1 0 1 0 0 0 0 0 (1)
Note 1: For the 11XXXX1, this bit must be a ‘ 1 ’.
DS22067H-page 16
Preliminary
? 2010 Microchip Technology Inc.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 11LC040-IP | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:1K-16K UNI/O? Serial EEPROM Family Data Sheet |
| 11LC040-ISN | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:1K-16K UNI/O? Serial EEPROM Family Data Sheet |
| 11LC040-ITO | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:1K-16K UNI/O? Serial EEPROM Family Data Sheet |
| 11LC040-ITT | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:1K-16K UNI/O? Serial EEPROM Family Data Sheet |
| 11LC040T-E/MNY | 功能描述:电可擦除可编程只读存储器 4K 512 X 8 2.5V SERIAL EE EXT RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
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