参数资料
型号: 11LC040T-E/TT
厂商: Microchip Technology
文件页数: 17/44页
文件大小: 0K
描述: IC EEPROM 4K FLASH SOT-23-3
标准包装: 3,000
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 4K (512 x 8)
速度: 100kHz
接口: UNI/O?(单线)
电源电压: 2.5 V ~ 5.5 V
工作温度: -40°C ~ 125°C
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商设备封装: SOT-23-3
包装: 带卷 (TR)
11AAXXX/11LCXXX
5.0
DATA PROTECTION
6.0
POWER-ON STATE
The following protection has been implemented to
prevent inadvertent writes to the array:
? The Write Enable Latch (WEL) is reset on power-
up
? A Write Enable ( WREN ) instruction must be issued
to set the write enable latch
? After a write, ERAL, SETAL, or WRSR command,
the write enable latch is reset
? Commands to access the array or write to the
status register are ignored during an internal write
The 11XX powers on in the following state:
? The device is in low-power Shutdown mode,
requiring a low-to-high transition on SCIO to enter
Idle mode
? The Write Enable Latch (WEL) is reset
? The internal Address Pointer is undefined
? A low-to-high transition, standby pulse and subse-
quent high-to-low transition on SCIO (the first low
pulse of the header) are required to enter the
active state
cycle and programming is not affected
.
TABLE 6-1:
WRITE PROTECT FUNCTIONALITY MATRIX
WEL
0
1
Protected Blocks
Protected
Protected
Unprotected Blocks
Protected
Writable
Status Register
Protected
Writable
? 2010 Microchip Technology Inc.
Preliminary
DS22067H-page 17
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11LC040T-I/MS 功能描述:电可擦除可编程只读存储器 4K 512 X 8 2.5V SERIAL EE IND RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8
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11LC040T-I/SN 功能描述:电可擦除可编程只读存储器 4K 512 X 8 2.5V SERIAL EE IND RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8
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