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参数资料
| 型号： | 11LC161T-E/TT |
| 厂商： | Microchip Technology |
| 文件页数： | 7/44页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 16K SER AUTO SOT23-3 |
| 标准包装： | 3,000 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 16K (2K x 8) |
| 速度： | 100kHz |
| 接口： | UNI/O?（单线） |
| 电源电压： | 2.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 125°C |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3 |
| 包装： | 带卷 (TR) |
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11AAXXX/11LCXXX
3.0
BUS CHARACTERISTICS
If a command is terminated in any manner other than a
NoMAK/SAK combination, then the master must per-
3.1 Standby Pulse
When the master has control of SCIO, a standby pulse
can be generated by holding SCIO high for T STBY . At
this time, the 11XX will reset and return to Standby
mode. Subsequently, a high-to-low transition on SCIO
(the first low pulse of the header) will return the device
to the active state.
Once a command is terminated satisfactorily (i.e., via
a NoMAK/SAK combination during the Acknowledge
sequence), performing a standby pulse is not required
to begin a new command as long as the device to be
selected is the same device selected during the previ-
ous command. However, a period of T SS must be
observed after the end of the command and before the
beginning of the start header. After T SS , the start
header (including T HDR low pulse) can be transmitted
in order to begin the new command.
form a standby pulse before beginning a new com-
mand, regardless of which device is to be selected.
Note: After a POR/BOR event occurs, a low-
to-high transition on SCIO must be gen-
erated before proceeding with communi-
cation, including a standby pulse.
An example of two consecutive commands is shown in
Figure 3-1. Note that the device address is the same
for both commands, indicating that the same device is
being selected both times.
A standby pulse cannot be generated while the slave
has control of SCIO. In this situation, the master must
wait for the slave to finish transmitting and to release
SCIO before the pulse can be generated.
If, at any point during a command, an error is detected
by the master, a standby pulse should be generated
and the command should be performed again.
FIGURE 3-1:
CONSECUTIVE COMMANDS EXAMPLE
SCIO
Standby Pulse (1)
Start Header
0 1 0 1 0 1 0 1
Device Address
1 0 1 0 0 0 0 0
SCIO
Start Header
0 1 0 1 0 1 0 1
Device Address
1 0 1 0 0 0 0 0
Note 1: After a POR/BOR event, a low-to-high transition on SCIO is required to occur before the first
standby pulse.
3.2 Start Data Transfer
All operations must be preceded by a start header. The
start header consists of holding SCIO low for a period
of T HDR , followed by transmitting an 8-bit ‘ 01010101 ’
code. This code is used to synchronize the slave’s
internal clock period with the master ’s clock period, so
accurate timing is very important.
When a standby pulse is not required (i.e., between
successive commands to the same device), a period of
T SS must be observed after the end of the command
and before the beginning of the start header.
Figure 3-2 shows the waveform for the start header,
including the required Acknowledge sequence at the
end of the byte.
FIGURE 3-2:
SCIO
START HEADER
T SS
T HDR
Data ‘ 0 ’
Data ‘ 1 ’
Data ‘ 0 ’
Data ‘ 1 ’
Data ‘ 0 ’
Data ‘ 1 ’
Data ‘ 0 ’
Data ‘ 1 ’
MAK
NoSAK
? 2010 Microchip Technology Inc.
Preliminary
DS22067H-page 7
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 11LC161T-I/MNY | 功能描述:电可擦除可编程只读存储器 16K 2048 X 8 2.5V SERIAL EE IND RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| 11LC161T-I/MS | 功能描述:电可擦除可编程只读存储器 16K 2048 X 8 2.5V SERIAL EE IND RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| 11LC161T-I/SN | 功能描述:电可擦除可编程只读存储器 16K 2048 X 8 2.5V SERIAL EE IND RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| 11LC161T-I/TT | 功能描述:电可擦除可编程只读存储器 16K 2048 X 8 2.5V SERIAL EE IND RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| 11LC161T-ICS16K | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:1K-16K UNI/O? Serial EEPROM Family Data Sheet |
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