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参数资料
| 型号： | 11LC161T-I/TT |
| 厂商： | Microchip Technology |
| 文件页数： | 16/44页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 16K SER IND SOT23-3 |
| 标准包装： | 3,000 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 16K (2K x 8) |
| 速度： | 100kHz |
| 接口： | UNI/O?（单线） |
| 电源电压： | 2.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3 |
| 包装： | 带卷 (TR) |
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11AAXXX/11LCXXX
4.7 Erase All ( ERAL ) Instruction
The ERAL instruction allows the user to write ‘0x00’ to
the entire memory array with one command. Note that
the write enable latch (WEL) must first be set by issuing
the WREN instruction.
Once the write enable latch is set, the user may pro-
ceed with issuing a ERAL instruction (including the
header and device address bytes). Immediately after
the NoMAK bit has been transmitted by the master, the
internal write cycle is initiated, during which time all
words of the memory array are written to ‘0x00’.
The ERAL instruction is ignored if either of the Block
Protect bits (BP0, BP1) are not 0, meaning 1/4, 1/2, or
all of the array is protected.
Note: The ERAL instruction must be termi-
nated with a NoMAK following the com-
mand byte. If a NoMAK is not received at
this point, the command will be consid-
ered invalid, and the device will go into
Idle mode without responding with a
SAK or executing the command.
FIGURE 4-8:
ERASE ALL COMMAND SEQUENCE
SCIO
SCIO
Standby Pulse
Command
0 1 1 0 1 1 0 1
Start Header
0 1 0 1 0 1 0 1
Twc
Device Address
1 0 1 0 0 0 0 0 (1)
Note 1: For the 11XXXX1, this bit must be a ‘ 1 ’.
4.8 Set All ( SETAL ) Instruction
The SETAL instruction allows the user to write ‘0xFF’
to the entire memory array with one command. Note
that the write enable latch (WEL) must first be set by
issuing the WREN instruction.
Once the write enable latch is set, the user may pro-
ceed with issuing a SETAL instruction (including the
header and device address bytes). Immediately after
the NoMAK bit has been transmitted by the master, the
internal write cycle is initiated, during which time all
words of the memory array are written to ‘0xFF’ .
The SETAL instruction is ignored if either of the Block
Protect bits (BP0, BP1) are not 0, meaning 1/4, 1/2, or
all of the array is protected.
Note: The SETAL instruction must be termi-
nated with a NoMAK following the com-
mand byte. If a NoMAK is not received at
this point, the command will be consid-
ered invalid, and the device will go into
Idle mode without responding with a
SAK or executing the command.
FIGURE 4-9:
SET ALL COMMAND SEQUENCE
SCIO
SCIO
Standby Pulse
Command
0 1 1 0 0 1 1 1
Start Header
0 1 0 1 0 1 0 1
Twc
Device Address
1 0 1 0 0 0 0 0 (1)
Note 1: For the 11XXXX1, this bit must be a ‘ 1 ’.
DS22067H-page 16
Preliminary
? 2010 Microchip Technology Inc.
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相关代理商/技术参数 |
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| 11L-C-24D | 制造商:Guardian Electric Manufacturing 功能描述:MAGNETIC LATCHING SOLENOID; Holding Force - Imperial:96ozf; Holding Force - Metric:26.689N; Solenoid Operation:Pull; Coil Voltage VDC Nom:24VDC; Solenoid Duty Cycle:Continuous; Coil Power Cont:4.1W; Coil Resistance:146ohm ;RoHS Compliant: Yes 制造商:Guardian Electric Manufacturing 功能描述:DC Frame Solenoid |
| 11L-C-6D | 制造商:Guardian Electric Manufacturing 功能描述:MAGNETIC LATCHING SOLENOID; Solenoid Operation:Pull; Coil Voltage VDC Nom:6V; Solenoid Duty Cycle:Continuous ;RoHS Compliant: Yes |
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