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参数资料
| 型号： | 1214-55 |
| 英文描述： | BJT |
| 中文描述： | 双极型晶体管 |
| 文件页数： | 1/3页 |
| 文件大小： | 339K |
| 代理商： | 1214-55 |
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE
THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE
PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
1214-30
30 Watts, 28 Volts, Pulsed
Radar 1200 - 1400 MHz
GENERAL DESCRIPTION
CASE OUTLINE
The 1214-30 is an internally matched, COMMON BASE transistor capable of
providing 30 Watts of pulsed RF output power at two milliseconds pulse
width, twenty percent duty factor across the band 1200 to 1400 MHz. This
hermetically solder-sealed transistor is specifically designed for long pulse
radar applications. It utilizes gold metalization and diffused emitter ballasting
to provide high reliability and supreme ruggedness.
55AW, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C
88 Watts
o
Maximum Voltage and Current
BVces
Collector to Emitter Voltage
50 Volts
BVebo
Emitter to Base Voltage
3.5 Volts
Ic
Collector Current
4.0 Amps
Maximum Temperatures
Storage Temperature
- 65 to + 200 C
o
Operating Junction Temperature
+ 200 C
o
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL
CHARACTERISTICS
TEST
MIN
TYP
MAX
UNITS
CONDITIONS
Pout
Pin
Power Input
Vcc = 28 Volts
6.0
Watts
Pg
ηc
VSWR
Power Out
F = 1200-1400 MHz
30
Watts
Power Gain
Pulse Width = 2 ms
7.0
dB
Collector Efficiency
Duty = 20%
48
%
Load Mismatch Tolerance
Rated Conditions
3:1
BVces
BVebo
Emitter to Base Breakdown
Ie = 5 mA
3.5
Volts
Hfe
Cob
θjc
Collector to Emitter Breakdown
Ic = 50 mA
50
Volts
DC Current Gain
Vce=5 V, Ic =500mA
20
Output Capacitance*
F=1 MHz, Vcb=28V
pF
Thermal Resistance
Rated Pulse Condition
2.0
C/W
o
* Not measureable due to internal prematch network
IssueA July 1997
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