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参数资料
| 型号： | 12197-507-XTD |
| 元件分类： | 调制器/解调器 |
| 英文描述： | 1.2 kbps DATA, MODEM, PQFP32 |
| 封装： | LEAD FREE, LQFP-32 |
| 文件页数： | 10/11页 |
| 文件大小： | 580K |
| 代理商： | 12197-507-XTD |
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Data Sheet
6.0 Electrical Specifications
Table 5: Absolute Maximums
S
Sy
ym
mb
bo
oll
P
Pa
arra
am
me
ette
err
M
Miin
n..
M
Ma
ax
x..
U
Un
niitts
s
TA
Ambient
-40
+85
°C
TS
Storage temperature
-55
150
°C
VDD
Supply voltage
-0.3
6.0
V
VIN, VOUT
DC input,output
-0.3
VDD+0.3
V
TL
Re-flow solder profile
per IPC/JEDEC
J-STD-020C
°C
Table 6: DC Characteristics
S
Sy
ym
mb
bo
oll
P
Pa
arra
am
me
ette
err
V
VD
DD
D
M
Miin
n..
T
Ty
yp
p..
M
Ma
ax
x..
U
Un
niitts
s
VIL
Input voltage, low
3.0 - 5.5
0.3*VDD
V
VIH
Input voltage
3.0 - 5.5
0.7*VDD
V
VOL
Output voltage, low (IOL = 0.67mA)
3.0 - 5.5
0.4
V
VOH
Output voltage, high (IOH = -0.67mA)
3.0 - 5.5
2.4
V
CIN
Input capacitance
Analog input
IRXA
Digital input
2.9
25
3.5
pF
IIL/IH
Input leakage current
+500
nA
IOLL
Output leakage current
+10
mA
IDD
Power supply current (RBIAS = 500k
W, IAREF = 1.235V)
3.3
5.0
330
400
450
600
mA
IAREF
Analog reference
3.3
5.0
1.2
1.235
2.5
2.6
V
ICDREF*
Carrier detect reference (IAREF - 0.08V)
1.15
V
OCBIAS
Comparator bias current (RBIAS = 500k
W, IAREF = 1.235V)
2.5
mA
*The HART specification requires carrier detect (OCD) to be active between 80 and 120 mVp-p. Setting ICDREF at IAREF - 0.08 VDC will set the carrier detect
to a nominal 100 mVp-p.
VDD = 3.0V to 5.5V, VSS = 0V, TA = -40°C to +85°C
Cautions:
1. CMOS devices are damaged by high-energy electrostatic discharge. Devices must be stored in conductive foam or with all pins shunted. Precautions
should be taken to avoid application of voltages higher than the maximum rating. Stresses above absolute maximum ratings may result in damage
to the device.
2. Remove power before insertion or removal of this device.
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相关代理商/技术参数 |
参数描述 |
|---|---|
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