参数资料
型号: 12CTQ040PBF
厂商: Vishay Semiconductors
文件页数: 1/7页
文件大小: 161K
描述: DIODE SCHOTTKY 40V 6A TO220AB
产品目录绘图: TO-220AB Series Side
TO-220AB Series Circuit
标准包装: 1,000
电压 - 在 If 时为正向 (Vf)(最大): 600mV @ 6A
电流 - 在 Vr 时反向漏电: 800µA @ 40V
电流 - 平均整流 (Io)(每个二极管): 6A
电压 - (Vr)(最大): 40V
二极管类型: 肖特基
速度: 快速恢复 =< 500 ns,> 200mA(Io)
二极管配置: 1 对共阴极
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220AB
包装: 管件
产品目录页面: 1530 (CN2011-ZH PDF)
其它名称: *12CTQ040PBF
VS-12CTQ040PBF
VS-12CTQ040PBF-ND
VS12CTQ040PBF
VS12CTQ040PBF-ND
VS-12CTQ...PbF Series, VS-12CTQ...-N3 Series
www.vishay.com
Vishay Semiconductors
Revision: 22-Aug-11
1
Document Number: 94130
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Schottky Rectifier, 2 x 6 A
FEATURES
? 175 °C TJ
operation
? Center tap TO-220 package
? Low forward voltage drop
High frequency operation
? High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
Guard ring for enhanced ruggedness and long
term reliability
Compliant to RoHS Directive 2002/95/EC
? Designed and qualified according to JEDEC-JESD47
? Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
The VS-12CTQ... center tap Schottky rectifier series has
been optimized for low reverse leakage at high temperature.
The proprietary barrier technology allows for reliable
operation up to 175 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
PRODUCT SUMMARY
Package TO-220AB
IF(AV)
2 x 6 A
VR
35 V, 40 V, 45 V
VF
at I
F
0.53 V
IRM
max. 7 mA at 125 °C
TJ
max. 175 °C
Diode variation Common cathode
EAS
8 mJ
2
Common
3Anodecathode
Anode
1
Base
common
cathode
2
TO-220AB
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS VALUES UNITS
IF(AV)
Rectangular waveform
12 A
VRRM
Range
35 to 45 V
IFSM
tp
= 5 μs sine 690 A
VF
6 Apk, TJ
= 125 °C (per leg) 0.53 V
TJ
Range
- 55 to 175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL
12CTQ035PbF
12CTQ035-N3
12CTQ040PbF
12CTQ040-N3
12CTQ045PbF
12CTQ045-N3
UNITS
VS-
VS-
VS-
VS-
VS-
VS-
Maximum DC
reverse voltage
VR
35 35 40 40 45 45 V
Maximum working
peak reverse
voltage
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
forward current
See fig. 5
per leg
IF(AV)
50 % duty cycle at TC
= 160 °C, rectangular waveform
6
A
per device
12
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
IFSM
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
10 ms sine or 6 ms rect. pulse 140VRRM
applied
690
A
Non-repetitive avalanche energy per leg
EAS
TJ
= 25 °C, I
AS
= 1.20 A, L = 11.10 mH
8mJ
Repetitive avalanche current per leg
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ
maximum V
A
= 1.5 x V
R
typical
1.20 A
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