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参数资料
| 型号： | 12F60S02 |
| 厂商： | VISHAY INTERTECHNOLOGY INC |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 12 A, 600 V, SILICON, RECTIFIER DIODE, DO-203AA |
| 封装： | DO-4, 1 PIN |
| 文件页数： | 6/11页 |
| 文件大小： | 2025K |
| 代理商： | 12F60S02 |
www.vishay.com
For technical questions, contact: ind-modules@vishay.com
Document Number: 93138
4
Revision: 26-Sep-08
1N3879(R), 1N3889(R), 6/12/16FL(R) Series
Vishay High Power Products
Fast Recovery Diodes
(Stud Version), 6/12/16 A
Note
The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Fig. 1 - Average Forward Current vs.
Maximum Allowable Case Temperature,
1N3879 and 6FL Series
Fig. 2 - Average Forward Current vs.
Maximum Allowable Case Temperature,
1N3889 and 12FL Series
Fig. 3 - Average Forward Current vs.
Maximum Allowable Case Temperature, 16FL Series
Fig. 4 - Reverse Recovery Time Test Waveform
ΔR
thJC CONDUCTION
CONDUCTION ANGLE
1N3879.
1N3883.
6FL..
1N3889.
1N3893.
12FL..
16FL..
1N3879.
1N3883.
6FL..
1N3889.
1N3893.
12FL..
16FL..
TEST CONDITIONS
UNITS
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
180°
0.58
0.46
0.37
0.33
0.26
0.21
TJ = 150 °C
K/W
120°
0.60
0.48
0.39
0.58
0.46
0.37
60°
1.28
1.02
0.82
1.28
1.02
0.82
30°
2.20
1.76
1.41
2.20
1.76
1.41
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