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参数资料
| 型号： | 130MT140KB |
| 元件分类： | 桥式整流 |
| 英文描述： | 3 PHASE, 130 A, 1400 V, SILICON, BRIDGE RECTIFIER DIODE |
| 封装： | INT-A-PAK-6 |
| 文件页数： | 2/7页 |
| 文件大小： | 94K |
| 代理商： | 130MT140KB |
130-160MT..KB Series
Bulletin I27502 rev. A 05/03
www.irf.com
2
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
V
RRM
, maximum repetitive
V
RSM
, maximum non-
I
RRM
max.
Type number
Code
peak reverse voltage
repetitive peak rev. voltage
@ T
J
max.
VV
mA
80
800
900
100
1000
1100
130-160MT..KB
120
1200
1300
10
140
1400
1500
160
1600
1700
I
O
Maximum DC output current
130 (160)
160 (200)
A
120° Rect conduction angle
@ Case temperature
85 (62)
85 (60)
°C
I
FSM
Maximum peak, one-cycle forward,
1130
1430
A
t = 10ms
No voltage
non-repetitive surge current
1180
1500
t = 8.3ms
reapplied
950
1200
t = 10ms
100% V
RRM
1000
1260
t = 8.3ms
reapplied
Initial T
J
= T
J
max.
I2t
Maximum I2t for fusing
64000
10200
A2s
t = 10ms
No voltage
5800
9300
t = 8.3ms
reapplied
4500
7200
t = 10ms
100% V
RRM
4100
6600
t = 8.3ms
reapplied
I2
√t
Maximum I2
√t for fusing
64000
102000
A2
√s t = 0.1 to 10ms, no voltage reapplied
VF(TO)1 Low level value of threshold voltage
0.78
0.81
V
(16.7% x
π x I
F(AV)
< I <
π x I
F(AV)
), @ T
J
max.
VF(TO)2 High level value of threshold voltage
0.99
1.04
(I >
π x I
F(AV)), @ TJ max.
rf1
Low level value of forward slope resistance
4.59
3.52
m
(16.7% x π x I
F(AV) < I < π x IF(AV)), @ TJ max.
rf2
High level value of forward slope resistance
4.17
3.13
(I >
π x I
F(AV)), @ TJ max.
V
FM
Maximum forward voltage drop
1.63
1.49
V
I
pk
= 200A, T
J
= 25°C, t
p
= 400s single junction
V
INS
RMS isolation voltage
4000
V
T
J
= 25°C, all terminal shorted
f = 50Hz, t = 1s
Parameter
130MT.KB 160MT.KB Units Conditions
Forward Conduction
Thermal and Mechanical Specifications
T
J
Max. junction operating temperature range
-40 to 150
°C
Tstg
Max. storage temperature range
-40 to 150
°C
RthJC Max. thermal resistance, junction to case
0.16
0.12
K/W
DC operation per module
0.93
0.73
DC operation per junction
0.18
0.15
120° Rect condunction angle per module
1.08
0.88
120° Rect condunction angle per junction
RthCS Max. thermal resistance, case to heatsink
0.03
K/W
Per module
Mounting surface smooth, flat and greased
T
Mounting torque ± 10%
to heatsink
4 to 6
Nm
to terminal
3 to 4
wt
Approximate weight
176
g
Parameter
130MT.KB 160MT.KB Units Conditions
A mounting compound is recommended and the
torque should be rechecked after a period of 3
hours to allow for the spread of the compound.
Lubricated threads.
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PDF描述 |
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| 160MT120KB | 3 PHASE, 160 A, 1200 V, SILICON, BRIDGE RECTIFIER DIODE |
| 160MT140KB | 3 PHASE, 160 A, 1400 V, SILICON, BRIDGE RECTIFIER DIODE |
| 132-09SMJTD | 1 ELEMENT, 0.09 uH, AIR-CORE, GENERAL PURPOSE INDUCTOR, SMD |
| 132-09SMJSD | 1 ELEMENT, 0.09 uH, AIR-CORE, GENERAL PURPOSE INDUCTOR, SMD |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 130MT140KPBF | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Three Phase Bridge, 130/160 A (Power Modules) |
| 130MT160K | 制造商:n/a 功能描述:Bridge Module |
| 130MT160KB | 功能描述:IC BRIDGE 3PH 1600V 130A INTAPAK RoHS:否 类别:半导体模块 >> 桥式整流器 系列:- 标准包装:10 系列:- 电压 - 峰值反向(最大):1000V 电流 - DC 正向(If):35A 二极管类型:单相 速度:标准恢复 >500ns，> 200mA（Io） 反向恢复时间(trr):- 安装类型:底座安装 封装/外壳:ISOTOP 包装:托盘 供应商设备封装:ISOTOP? |
| 130MT160KBPBF | 制造商:International Rectifier 功能描述:BRIDGE RECTIFIER 130A 3 PHASE |
| 130MT160KPBF | 制造商:Vishay Semiconductors 功能描述:Rectifier, 3-Phase Bridge, 1600V, 130A, INT-A-PAK 制造商:Vishay Angstrohm 功能描述:Diode Rectifier Bridge Single 1.6KV 160A 6-Pin INT-A-PAK 制造商:Vishay Intertechnologies 功能描述:MT..KB Series 1600 V 160 A Three Phase Controlled Bridge Power Module-INT-A-Pak |
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