参数资料
型号: 14H22
英文描述: Phototransistors
中文描述: 光电晶体管
文件页数: 1/2页
文件大小: 30K
代理商: 14H22
SIDE LOOK PACKAGE
NPN PHOTOTRANSISTOR
MID-14H22
Description
Package Dimensions
The MID-14H22 is a NPN silicon phototransistor moun-
ted in a lensed ,black plastic and side looking package.
Features
l
Wide range of collector current
l
Lensed for high sensitivity
l
Low cost plastic package
l
For 850nm IR
Absolute Maximum Ratings
Parameter
Maximum Rating
Unit
Power Dissipation
100
mW
Collector-Emitter Voltage
30
V
Emitter-Collector Voltage
5
V
Operating Temperature Range
-55
oC to +100oC
Storage Temperature Range
-55
oC to +100oC
Lead Soldering Temperature
260
oC for 5 seconds
11/14/2000
Notes :
1. All dimensions are in millimeters. (inches).
2. LED die vertical & horizontal placement tolerance is ± 0.12 mm.
3. Protruded resin under flange is 1.5 mm (.059") max.
4. Lead spacing is measured where the leads emerge from the package.
Unity Opto Technology Co., Ltd.
Unit: mm ( inches )
0.50 TYP.
(.020)
φ 1.50
(.059)
2.54
(.100)
14.30MIN
(.563)
1.80
(.071)
4.00 ± .08
(.158±.003)
1.80
(.071)
1.22
.048
1.66 ± .08
(.065±.003)
1.00MIN
(.039)
C
E
1.50 ± .08
(.059±.032)
1.10 ±.80
(.043±.032)
0.75 ± 0.8
(.030±.032)
60°
.80 ± .02
(.031±.001)
1.31 ± .12
(.052±.005)
4.12
(.162)
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