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参数资料
| 型号： | 150U080D |
| 英文描述： | 800V 150A Std. Recovery Diode in a DO-205AA (DO-8)package |
| 中文描述： | 800V的150A性病。恢复二极管中的DO - 205AA（请勿- 8）封装 |
| 文件页数： | 2/6页 |
| 文件大小： | 87K |
| 代理商： | 150U080D |
150U(R).. Series
2
www.irf.com
Bulletin I2025 rev. C 10/02
TJ
Max.junctionoperatingtemperaturerange
-40 to 180
Tstg
Max. storage temperature range
-40 to 180
R
thJC
Max. thermal resistance, junction to case
0.3
DC operation
RthCS
Max. thermal resistance, case to heatsink
0.1
Mounting surface, smooth, flat and greased
T
Max. allowed mounting torque +0 -20%
17
Not lubricated threads
14.5
Lubricated threads
wt
Approximate weight
130
g
Case style
DO-205 (DO-8)
See Outline Table
Parameter
150U(R)..
Units
Conditions
Thermal and Mechanical Specifications
°C
K/W
Nm
R
thJC Conduction
(The following table shows the increment of thermal resistence R thJC when devices operate at different conduction angles than DC)
180°
0.031
0.023
T
J
= T
J
max.
120°
0.038
0.040
90°
0.048
0.053
60°
0.071
0.075
30°
0.120
0.121
Conduction angle
Sinusoidal conduction
Rectangular conduction Units
Conditions
K/W
I
F(AV)
Max. average forward current
150
A
180° conduction, half sine wave
@ Case temperature
125
°C
I
F(RMS)
Max. RMS forward current
235
A
Dc @ 110°C
I
FSM
Max. peak, one-cycle forward,
3000
A
t = 10ms
No voltage
non-repetitive surge current
3140
t = 8.3ms
reapplied
Sinusoidal half wave,
I2t
Maximum I2t for fusing
45
KA2s
t = 10ms
No voltage
Initial T
J
= T
J
max.
41
t = 8.3ms
reapplied
I2
√t
Maximum I2
√t for fusing
-
KA2
√s
t = 0.1 to 10ms, no voltage reapplied
r
f
Slope resistance
0.97
m
@ T
J
= T
J
max.
VF(T0)
Threshold voltage
0.80
V
VFM
Max. forward voltage drop
1.47
V
Ipk= 600A, TJ = 25°C, tp = 10ms sinusoidal wave
Parameter
150U(R)..
Units
Conditions
Forward Conduction
Voltage
V
RRM
, maximum repetitive
V
RSM
, maximum non-
I
RRM
max.
Type number
Code
peak reverse voltage
repetitive peak rev. voltage
@ T
J
= T
J
max.
VV
mA
60
600
700
150U(R)..
80
800
900
15
100
1000
1100
120
1200
1300
ELECTRICAL SPECIFICATIONS
Voltage Ratings
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