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参数资料
| 型号： | 1516-35 |
| 英文描述： | BJT |
| 中文描述： | 双极型晶体管 |
| 文件页数： | 1/2页 |
| 文件大小： | 83K |
| 代理商： | 1516-35 |
R.1.072099
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION
PLEASE CHECK OUR WEB SITE AT
WWW.GHZ.COM OR CONTACT OUR FACTORY DIRECT.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
1516-35
35 WATT, 28V, Pulsed
Microwave 1450 - 1550 MHz
Proposed Product
GENERAL DESCRIPTION
The 1516-35 is a common base transistor capable of providing 35 Watts of
Class C, RF output power over the band 1450-1550 MHz. This transistor is
designed for Microwave Broadband Class C amplifier applications. It includes
Input and Output prematching and utilizes gold metalization and diffused
ballasting to provide high reliability and supreme ruggedness. The transistor
uses a fully hermetic High Temperature solder sealed package.
CASE OUTLINE
55AW, Style 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @25
!!!!C
135 W
Maximum Voltage and Current
BVCES Collector to Emitter Voltage
45V
BVEBO Emitter to Base Voltage
3.5V
IC
Collector Current
12A
Temperatures
Storage Temperature
-65 to +200!C
Operating Junction Temperature
+200!C
ELECTRICAL CHARACTERISTICS @ 25!
!!!C
SYMBOL
CHARACTERISTICS
TEST
CONDITIONS
MIN
TYP
MAX
UNITS
POUT
Power out
F = 1450-1550
35
W
PIN
Power input
7W
Pg
Power Gain
7.0
dB
"
C
Collector Efficiency
VCB = 28 Volts
PIN = 7 Watts
As Above
40
%
VSWR
Load Mismatch Tolerance
F = 1.45 GHz, PIN = 7 W
10:1
BVCES
Collector to Emitter Breakdown
IC = 20mA
45
V
BVEBO
Emitter to Base Breakdown
Ie = 15mA
3.5
V
hFE
Current Gain
VCE = 5V, IC = 1A
10
100
COB*
Output Capacitance
F = 1MHz, VCB = 28V
pF
#jc
Thermal Resistance
1.3
OC/W
*Not measurable due to output match
Issued July 1999
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