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参数资料
| 型号： | 1618-35 |
| 英文描述： | TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 12A I(C) | FO-57DVAR |
| 中文描述： | 晶体管|晶体管|叩| 45V的五（巴西）总裁| 12A条一（c）|佛57DVAR |
| 文件页数： | 1/3页 |
| 文件大小： | 289K |
| 代理商： | 1618-35 |
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE
THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE
PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
1618-35
35 Watt - 28 Volts, Class C
Microwave 1600 - 1800 MHz
GENERAL DESCRIPTION
CASE OUTLINE
The 1618-35 is a COMMON BASE transistor capable of providing 35 Watts
of Class C, RF output power over the band 1600-1800 MHz. This transistor is
designed for Microwave Broadband Class C amplifier applications. It includes
Input and Output prematching and utilizes Gold metalization and diffused
ballasting to provide high reliability and supreme ruggedness. The transistor
uses a fully hermetic High Temperature Solder sealed package.
55AW, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C
135 Watts
o
Maximum Voltage and Current
BVces
Collector to Emitter Voltage
45 Volts
BVebo
Emitter to Base Voltage
3.5 Volts
Ic
Collector Current
12 A
Maximum Temperatures
Storage Temperature
- 65 to + 200 C
o
Operating Junction Temperature
+ 200 C
o
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Pin
Power Input
Vcb = 28 Volts
Pg
η
c
VSWR
1
Power Out
F = 1600-1800 MHz
Power Gain
Pin = 7 Watts
Collector Efficiency
As Above
Load Mismatch Tolerance
F = 1.1 GHz, Pin = 7 W
35
Watt
7.0
dB
40
%
7
Watt
10:1
BVces
BVebo
H
FE
Cob
θjc
Collector to Emitter Breakdown
Ic = 20 mA
45
Volts
Emitter to Base Breakdown
Ie = 15 mA
3.5
Volts
Current Gain
10
100
Output Capacitance
pF
Thermal Resistance
1.3
C/W
Vce = 5 V, Ic = 1 A
F = 1 MHz, Vcb = 28V
o
Issue A, July 1997
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