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参数资料
| 型号： | 16F80MS02 |
| 厂商： | VISHAY INTERTECHNOLOGY INC |
| 元件分类： | 整流器 |
| 英文描述： | 16 A, 800 V, SILICON, RECTIFIER DIODE, DO-203AA |
| 封装： | DO-4, 1 PIN |
| 文件页数： | 4/11页 |
| 文件大小： | 2025K |
| 代理商： | 16F80MS02 |
www.vishay.com
For technical questions, contact: ind-modules@vishay.com
Document Number: 93138
2
Revision: 26-Sep-08
1N3879(R), 1N3889(R), 6/12/16FL(R) Series
Vishay High Power Products
Fast Recovery Diodes
(Stud Version), 6/12/16 A
ELECTRICAL SPECIFICATIONS
Note
(1) JEDEC registered values
Note
(1) JEDEC registered values
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
VRRM, MAXIMUM
REPETITIVE PEAK AND
OFF-STATE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE
PEAK VOLTAGE
V
IRRM MAXIMUM
AT TJ = 25 °C
A
IRRM MAXIMUM
AT TJ = 100 °C
mA
IRRM MAXIMUM
AT TJ = 150 °C
mA
1N3879.
-
50
75
15 (1)
1.0 (1)
3.0 (1)
1N3880.
100
150
1N3881.
200
250
1N3882.
300
350
1N3883.
400
450
1N3889.
-
50
75
25 (1)
3.0 (1)
5.0 (1)
1N3890.
100
150
1N3891.
200
250
1N3892.
300
350
1N3893.
400
450
6FL..
12FL..
16FL..
550
75
50
-
6.0
10
100
150
20
200
275
40
400
500
60
600
725
80
800
950
100
1000
1250
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
1N3879.
1N3883.
6FL..
1N3889.
1N3893.
12FL..
16FL..
UNITS
Maximum average forward current
at case temperature
IF(AV)
180° conduction, half sine wave
DC
6 (1)
6
12 (1)
16
A
100
°C
Maximum RMS current
IF(RMS)
9.5
19
25
A
Maximum peak, one-cycle
non-repetitive forward current
IFSM
t = 10 ms
No voltage
reapplied
Sinusoidal
half wave,
initial
TJ = 150 °C
85
130
170
215
t = 8.3 ms
90
135
180
225
t = 10 ms
100 % VRRM
reapplied
72
110
145
180
t = 8.3 ms
75 (1)
115
150 (1)
190
Maximum I2t for fusing
I2t
t = 10 ms
No voltage
reapplied
36
86
145
230
A2s
t = 8.3 ms
33
78
130
210
t = 10 ms
100 % VRRM
reapplied
26
60
103
160
t = 8.3 ms
23
55
94
150
Maximum I2
√t for fusing
I2
√t
t = 0.1 to 10 ms, no voltage reapplied
363
856
1452
2290
A2
√s
Maximum forward voltage drop
VFM
TJ = 25 °C; IF = Rated IF(AV) (DC)
1.4 (1)
1.4
1.4 (1)
1.4
V
TC = 100 °C; IFM = π x rated IF(AV)
1.5 (1)
1.5
1.5 (1)
1.5
V
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