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参数资料
| 型号： | 16FL2CZ47A |
| 元件分类： | 整流器 |
| 英文描述： | 16 A, 100 V, SILICON, RECTIFIER DIODE |
| 封装： | LEAD FREE, 12-10C1A, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 329K |
| 代理商： | 16FL2CZ47A |
16DL2CZ47A,16FL2CZ47A
2006-11-08
1
TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE
16DL2CZ47A,16FL2CZ47A
SWITCHING MODE POWER SUPPLY APPLICATION
CONVERTER & CHOPPER APPLICATION
Repetitive Peak Reverse Voltage
: VRRM = 200 V, 300 V
Average Output Rectified Current : IO = 16 A
Ultra Fast ReverseRecovery Time : trr = 35 ns (Max)
Low Switching Losses and Output Noise
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
16DL2CZ47A
200
Repetitive Peak
Reverse Voltage
16FL2CZ47A
VRRM
100
V
Average Output Rectified Current
(Full Sine Waveform)
IO
16
A
80 (50Hz)
Peak One Cycle Surge Forward
Current (NonRepetitive)
IFSM
88 (60Hz)
A
Junction Temperature
Tj
40~150
°C
Storage Temperature Range
Tstg
40~150
°C
Screw Torque
―
0.6
Nm
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN
TYP.
MAX
UNIT
16DL2CZ47A
―
0.98
Peak Forward
Voltage
(Note 1) 16FL2CZ47A
VFM
IFM = 8A
―
1.3
V
Repetitive Peak ReverseCurrent
(Note 1)
IRRM
VRRM = Rated
―
50
μA
Reverse Recovery Time
(Note 1)
trr
IF = 2.0A, di / dt = 50A / μs
―
35
ns
Forward Recovery Time
(Note 1)
tfr
IF = 1.0A
―
100
ns
Thermal Resistance
Rth (jc)
Total DC, Junction to Case
―
3.3
°C / W
Note 1: A value applied to one cell.
POLARITY
Unit: mm
JEDEC
JEITA
TOSHIBA
1210C1A
Weight: 2.0 g (typ.)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 16FL2CZ47A(F) | 功能描述:整流器 Diode Hi Efficiency 100V 16A RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| 16FL40S02 | 功能描述:DIODE FAST REC 400V 16A DO-4 RoHS:是 类别:分离式半导体产品 >> 单二极管/整流器 系列:- 标准包装:100 系列:- 二极管类型:标准 电压 - (Vr)（最大）:50V 电流 - 平均整流 (Io):6A 电压 - 在 If 时为正向 (Vf)（最大）:1.4V @ 6A 速度:快速恢复 = 200mA（Io） 反向恢复时间(trr):300ns 电流 - 在 Vr 时反向漏电:15µA @ 50V 电容@ Vr, F:- 安装类型:底座，接线柱安装 封装/外壳:DO-203AA，DO-4，接线柱 供应商设备封装:DO-203AA 包装:散装 其它名称:*1N3879 |
| 16FL40S05 | 功能描述:DIODE FAST REC 400V 16A DO-4 RoHS:是 类别:分离式半导体产品 >> 单二极管/整流器 系列:- 标准包装:100 系列:- 二极管类型:标准 电压 - (Vr)（最大）:50V 电流 - 平均整流 (Io):6A 电压 - 在 If 时为正向 (Vf)（最大）:1.4V @ 6A 速度:快速恢复 = 200mA（Io） 反向恢复时间(trr):300ns 电流 - 在 Vr 时反向漏电:15µA @ 50V 电容@ Vr, F:- 安装类型:底座，接线柱安装 封装/外壳:DO-203AA，DO-4，接线柱 供应商设备封装:DO-203AA 包装:散装 其它名称:*1N3879 |
| 16FL40S10 | 制造商:IRF 制造商全称:International Rectifier 功能描述:6A, 12A AND 16A FAST RECOVERY RECTIFIERS |
| 16FL5S02 | 制造商:IRF 制造商全称:International Rectifier 功能描述:6A, 12A AND 16A FAST RECOVERY RECTIFIERS |
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