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参数资料
| 型号： | 183NQ100R |
| 元件分类： | 整流器 |
| 英文描述： | 180 A, 100 V, SILICON, RECTIFIER DIODE |
| 封装： | PLASTIC, D-67, HALF PACK-1 |
| 文件页数： | 2/5页 |
| 文件大小： | 100K |
| 代理商： | 183NQ100R |
183NQ...(R) Series
Bulletin PD-2.256 rev. B 05/02
2
www.irf.com
T
J
Max. Junction Temperature Range
-55 to 175
°C
T
stg
Max. Storage Temperature Range
-55 to 175
°C
R
thJC Max. Thermal Resistance Junction
0.30
°C/W DCoperation
* See Fig. 4
to Case
R
thCS Typical Thermal Resistance, Case to
0.15
°C/W Mounting surface , smooth and greased
Heatsink
wt
Approximate Weight
25.6(0.9) g(oz.)
T
MountingTorque
Min.
40 (35)
Non-lubricatedthreads
Max.
58 (50)
Terminal Torque
Min.
58 (50)
Max.
86 (75)
CaseStyle
HALF PAK Module
Thermal-Mechanical Specifications
Parameters
183NQ Units
Conditions
Kg-cm
(Ibf-in)
V
FM
Max. Forward Voltage Drop
(1)
0.95
V
@ 180A
* See Fig. 1
1.14
V
@ 360A
0.75
V
@ 180A
0.89
V
@ 360A
I
RM
Max. Reverse Leakage Current (1)
4.5
mA
T
J =
25 °C
* See Fig. 2
60
mA
T
J = 125 °C
C
T
Max. Junction Capacitance
4150
pF
V
R = 5VDC, (test signal range 100Khz to 1Mhz) 25 °C
L
S
Typical Series Inductance
6.0
nH
From top of terminal hole to mounting plane
dv/dt Max. Voltage Rate of Change
10000
V/ s
(Rated V
R)
T
J =
25 °C
T
J = 125 °C
V
R = rated VR
Parameters
183NQ Units
Conditions
(1) Pulse Width < 300s, Duty Cycle < 2%
Electrical Specifications
I
F(AV) Max. Average Forward Current
180
A
50% duty cycle @ T
C = 116° C, rectangular wave form
* See Fig. 5
I
FSM
Max.PeakOneCycleNon-Repetitive
22,000
5s Sine or 3s Rect. pulse
Surge Current * See Fig. 7
1550
10ms Sine or 6ms Rect. pulse
E
AS
Non-RepetitiveAvalancheEnergy
15
mJ
T
J = 25 °C, IAS = 1 Amps, L = 30 mH
I
AR
RepetitiveAvalancheCurrent
1
A
Currentdecayinglinearlytozeroin1sec
Frequency limited by T
J max. VA = 1.5 x VR typical
Parameters
183NQ Units
Conditions
Absolute Maximum Ratings
A
Following any rated
load condition and
with rated V
RRM applied
Part number
183NQ080
183NQ090
183NQ100
V
R
Max. DC Reverse Voltage (V)
V
RWM Max. Working Peak Reverse Voltage (V)
Voltage Ratings
80
90
100
相关PDF资料 |
PDF描述 |
|---|---|
| 183NQ100 | 180 A, 100 V, SILICON, RECTIFIER DIODE |
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| 184.435 | 1 ELEMENT, 2800 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR |
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