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参数资料
| 型号： | 18TQ040 |
| 元件分类： | 整流器 |
| 英文描述： | 18 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封装： | PLASTIC PACKAGE-2 |
| 文件页数： | 2/8页 |
| 文件大小： | 205K |
| 代理商： | 18TQ040 |
18TQ... Series
2
Bulletin PD-20178 rev. C 07/03
www.irf.com
V
FM
Max. Forward Voltage Drop
(1)
0.60
V
@ 18A
* See Fig. 1
0.72
V
@ 36A
0.53
V
@ 18A
0.67
V
@ 36A
I
RM
Max. Reverse Leakage Current (1)
2.5
mA
T
J =
25 °C
* See Fig. 2
25
mA
T
J = 125 °C
C
T
Max. Junction Capacitance
1400
pF
V
R = 5VDC, (test signal range 100Khz to 1Mhz) 25 °C
L
S
Typical Series Inductance
8.0
nH
Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change
10000
V/ s
(Rated V
R)
T
J =
25 °C
T
J = 125 °C
V
R = rated VR
Electrical Specifications
Parameters
18TQ
Units
Conditions
(1) Pulse Width < 300s, Duty Cycle < 2%
T
J
Max. Junction Temperature Range
-55 to 175
°C
T
stg
Max. Storage Temperature Range
-55 to 175
°C
R
thJC Max. Thermal Resistance Junction
1.50
°C/W DC operation
* See Fig. 4
to Case
R
thCS Typical Thermal Resistance, Case to
0.50
°C/W Mounting surface , smooth and greased
Heatsink
wt
Approximate Weight
2 (0.07)
g (oz.)
T
Mounting Torque
Min.
6 (5)
Max.
12 (10)
Thermal-Mechanical Specifications
Parameters
18TQ
Units
Conditions
Kg-cm
(Ibf-in)
I
F(AV) Max. Average Forward Current
18
A
50% duty cycle @ T
C = 149° C, rectangular wave form
* See Fig. 5
I
FSM
Max. Peak One Cycle Non-Repetitive
1800
5s Sine or 3s Rect. pulse
Surge Current * See Fig. 7
390
10ms Sine or 6ms Rect. pulse
E
AS
Non-Repetitive Avalanche Energy
24
mJ
T
J = 25 °C, IAS = 3.6 Amps, L = 3.7 mH
I
AR
Repetitive Avalanche Current
3.6
A
Current decaying linearly to zero in 1 sec
Frequency limited by T
J max. VA = 1.5 x VR typical
Parameters
18TQ Units
Conditions
Absolute Maximum Ratings
A
Following any rated
load condition and
with rated V
RRM applied
Part number
18TQ035
18TQ040
18TQ045
V
R
Max. DC Reverse Voltage (V)
V
RWM Max. Working Peak Reverse Voltage (V)
35
40
45
Voltage Ratings
相关PDF资料 |
PDF描述 |
|---|---|
| 18TQ045 | 18 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 193K | 1 ELEMENT, 2600000 uH, GENERAL PURPOSE INDUCTOR |
| 193L | 1 ELEMENT, 5000000 uH, GENERAL PURPOSE INDUCTOR |
| 193N | 1 ELEMENT, 3000000 uH, GENERAL PURPOSE INDUCTOR |
| 193P | 1 ELEMENT, 5000000 uH, GENERAL PURPOSE INDUCTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 18TQ040PBF | 功能描述:DIODE SCHOTTKY 40V 18A TO220AC RoHS:是 类别:分离式半导体产品 >> 单二极管/整流器 系列:- 标准包装:100 系列:- 二极管类型:标准 电压 - (Vr)（最大）:50V 电流 - 平均整流 (Io):6A 电压 - 在 If 时为正向 (Vf)（最大）:1.4V @ 6A 速度:快速恢复 = 200mA（Io） 反向恢复时间(trr):300ns 电流 - 在 Vr 时反向漏电:15µA @ 50V 电容@ Vr, F:- 安装类型:底座，接线柱安装 封装/外壳:DO-203AA，DO-4，接线柱 供应商设备封装:DO-203AA 包装:散装 其它名称:*1N3879 |
| 18TQ040S | 制造商:IRF 制造商全称:International Rectifier 功能描述:SCHOTTKY RECTIFIER |
| 18TQ040SPBF | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Schottky Rectifier, 18 A |
| 18TQ040STRL | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Schottky Rectifier, 18 A |
| 18TQ040STRLPBF | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Schottky Rectifier, 18 A |
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