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参数资料
| 型号： | 1A1 |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 1 A, 50 V, SILICON, SIGNAL DIODE |
| 封装： | ROHS COMPLIANT, PLASTIC, R-1, 2 PIN |
| 文件页数： | 2/2页 |
| 文件大小： | 68K |
| 代理商： | 1A1 |
PAGE . 2
STAD-FEB.27.2009
1
1A1~1A7
Fig.1 FORWARD CURRENT DERATING CURVE
Fig.5 TYPICAL JUNCTION CAPACITANCE
RATING AND CHARACTERISTIC CURVES
3
.0
2.0
1.0
0
50
100
150
0
.5
1.5
2.5
AMBIENT T EMPERATURE, C
O
SINGLE PHASE HALF WAVE 60Hz
RESISTIVE OR INDUCTIVE LOAD
P.C.B MOUNTED ON 0.3 x 0.3"
(8.0 x 8.0mm) COPPER PAD A REAS
A
VER
AGE
F
OR
W
A
RD
R
E
C
T
IF
IE
D
CU
R
EN
T
,
A
M
PER
ES
100
40
20
10
4.0
2.0
1.0
0.4
0.2
0.1
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.4
Fig.2-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
INST
ANT
A
NE
OUS
F
OR
W
A
RD
CURRENT
,
AMP
E
RES
25
20
15
10
5
0
1
2
6
10
20
40
60
100
30
Fig.4-MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
PEAK
FOR
W
AR
D
SURGE
CU
RRENT
,A
M
PER
ES
NUMBER OF CYCLES AT 60Hz
8.3ms Single Half Sine-Wave
JEDEC Method
10
0.1
1.0
100
1000
1
2
5
10
20
50
100
CAP
ACIT
ANCE
,pF
T= 25 C
f=1.0mHz
Vsig=50mVp-p
J
O
REVERSE VOLTAGE ,VOLTS
Fig.3-TYPICAL REVERSE CHARACTERISTIC
m
PERCENTAGE OF PEAK REVERSE VOLTAGE,%
0.1
20
40
60
80
100
120
140
1.0
10
100
1000
T= 125 C
o
J
T= 100 C
J
O
T= 25 C
J
O
INST
ANT
ANEOUS
REVERSE
CURRENT
,
A
m
相关PDF资料 |
PDF描述 |
|---|---|
| 1A2 | 1 A, 100 V, SILICON, SIGNAL DIODE |
| 1A4 | 1 A, 400 V, SILICON, SIGNAL DIODE |
| 1A7 | 1 A, 1000 V, SILICON, SIGNAL DIODE |
| 1B005TR16 | 1 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE |
| 1B01TRR16 | 1 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 1A1 _AY _10001 | 制造商:PanJit Touch Screens 功能描述: |
| 1A1_06 | 制造商:WTE 制造商全称:Won-Top Electronics 功能描述:1.0A STANDARD DIODE |
| 1A1_07 | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:MINIATURE PLASTIC SILICON RECTIFIER |
| 1A1_09 | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:MINIATURE PLASTIC SILICON RECTIFIER |
| 1A1_1 | 制造商:HY 制造商全称:HY ELECTRONIC CORP. 功能描述:PLASTIC SILICON RECTIFIERS |
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