参数资料
型号: 1A1G
元件分类: 二极管(射频、小信号、开关、功率)
英文描述: 1 A, 50 V, SILICON, SIGNAL DIODE
封装: ROHS COMPLIANT, PLASTIC, R-1, 2 PIN
文件页数: 2/2页
文件大小: 77K
代理商: 1A1G
PAGE . 2
STAD-FEB.04.2009
1
1A1G~1A7G
Fig.1 FORWARD CURRENT DERATING CURVE
Fig.5 TYPICAL JUNCTION CAPACITANCE
RATING AND CHARACTERISTIC CURVES
3.0
2.0
1.0
0
050
100
150
0.5
1.5
2.5
AMBIENT TEMPERATURE, C
O
SINGLE PHASE HALF WAVE 60Hz
RESISTIVE OR INDUCTIVE LOAD
P.C.B MOUNTED ON 0.3 x 0.3"
(8.0 x 8.0mm) COPPER PAD AREAS
A
VERAGE
F
OR
W
A
RD
RECTIFIED
CURRENT
,
AMPERES
100
40
20
10
4.0
2.0
1.0
0.4
0.2
0.1
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.4
Fig.2-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
INST
ANT
A
NEOUS
F
OR
W
A
RD
CURRENT
,
AMPERES
25
20
15
10
5
0
1
2
6
10
20
40
60
100
30
Fig.4-MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
PEAK
FOR
W
ARD
S
URGE
C
URRENT
,AMPERES
NUMBER OF CYCLES AT 60Hz
8.3ms Single Half Sine-Wave
JEDEC Method
10
0.1
1.0
100
1000
1
2
5
10
20
50
100
CAP
A
CIT
A
NCE,
p
F
T= 25 C
f = 1.0mHz
Vsig = 50mVp-p
J
O
REVERSE VOLTAGE, VOLTS
Fig.3-TYPICALREVERSECHARACTERISTIC
INST
ANT
A
NEOUS
REVERSE
CURRENT
,u
A
PERCENTAGE OF PEAK REVERSE VOLTAGE,%
0.01
20
40
60
80
100
120
140
0.1
1.0
10
100
T= 125 C
o
J
T= 100 C
J
O
T= 25 C
J
O
相关PDF资料
PDF描述
1A4G 1 A, 400 V, SILICON, SIGNAL DIODE
1A1 1 A, 50 V, SILICON, SIGNAL DIODE
1A2 1 A, 100 V, SILICON, SIGNAL DIODE
1A4 1 A, 400 V, SILICON, SIGNAL DIODE
1A7 1 A, 1000 V, SILICON, SIGNAL DIODE
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