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参数资料
| 型号： | 1B10 |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 1 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE |
| 封装： | DIP-4 |
| 文件页数： | 1/4页 |
| 文件大小： | 56K |
| 代理商： | 1B10 |
1B...
Units Conditions
I
O
Maximum DC output
1.0
A
Tamb = 40
oC, Resistive or inductive load
current
0.8
A
Tamb = 40
oC, Capacitive load
I
FSM
Maximum peak one
30
A
t = 10ms, 20ms
Following any rated
cycle, non-repetitive
31
A
t = 8.3ms, 16.7ms
load condition and with
surge current
rated VRRM reapplied
I
2t
Maximum I
2t capability
4.5
A
2s
t = 10ms
Initial T
J = TJ max
for fusing
4.1
A
2s
t = 8.3ms
100% VRRM reapplied
6.4
A
2s
t = 10ms
Initial T
J = TJ max
5.8
A2s
t = 8.3ms
no voltage reapplied
I
2√t
Maximum I
2√t64
A
2√s
t = 0.1 to 10ms, no voltage reapplied
capability for fusing
V
FM
Maximum peak forward
1.0
V
I
FM
= 1.0A, T
J
= 25oC
voltage per diode
I
RM
Typical peak reverse
5
A
TJ = 25
oC, 100% V
RRM
leakage per diode
100
A
TJ = 150
oC, 100% V
RRM
f
Operating frequency
50 to 1000
Hz
range
V
RRM
Maximum repetitive peak
50 to 1000
V
reverse voltage range
1B...
Units
Conditions
T
J
Operating and storage
- 55 to 150
oC
T
stg
temperature range
R
thJA
Thermal resistance,
60
K/W
junctions to ambient
W
Approximate weight
0.6 (0.02)
g (oz)
I
O(av)
= 1.0 A
V
RRM
range
50 to 1000V
Bulletin E2788 rev. D 04/00
1B SERIES
1A Single Phase D.I.L. Rectifier Bridge
Leads on standard 0.1" grid
Suitable for automatic insertion
High surge current capability
Fully characterised data
Wide temperature range
Surface mount option
+
-
~
I
O(av)
Electrical Specification
Thermal and Mechanical Specifications
The 1B Series of Single Phase Rectifier Bridges
consists of four silicon junctions encapsulated in
a 4 pin D.I.L. package. These devices are intended
for general use in industrial and consumer equip-
ment.
Description
1
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