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参数资料
| 型号： | 1DL42A |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 1 A, 200 V, SILICON, SIGNAL DIODE |
| 封装： | LEAD FREE, 3-3F2A, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 160K |
| 代理商： | 1DL42A |
1DL42A
2006-11-08
1
TOSHIBA High Efficiency Rectifier (HED) Silicon Epitaxial Junction Type
1DL42A
Switching Mode Power Supply Applications
Repetitive Peak Reverse Voltage: VRRM = 200 V
Average Forward Current: IF (AV) = 1.0 A
Very Fast Reverse-Recovery Time: trr = 35 ns (max)
Low Forward Voltage: VFM = 0.98 V (max)
Available to Reduce Switching Losses and Output Noise
Absolute Maximum Ratings (Ta
= 25°C)
Characteristics
Symbol
Rating
Unit
Repetitive peak reverse voltage
VRRM
200
V
Average forward current
IF (AV)
1.0
A
30 (50 Hz)
Peak one cycle surge forward current
(non-repetitive)
IFSM
33 (60 Hz)
A
Junction temperature
Tj
40 to 150
°C
Storage temperature range
Tstg
40 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Electrical Characteristics (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Peak forward voltage
VFM
IFM = 1.0 A
0.98
V
Repetitive peak reverse current
IRRM
VRRM = 200 V
100
A
Reverse recovery time
trr
IF = 1 A, di/dt = 30 A/s
35
ns
Forward recovery time
tfr
IF = 1.0 A
100
ns
Marking
Abbreviation Code
Part No.
DLA
1DL42A
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
3-3F2A
Weight: 0.18 g (typ.)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
DLA
Part No. (or abbreviation code)
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