参数资料
型号: 1E4
元件分类: 二极管(射频、小信号、开关、功率)
英文描述: 1 A, 400 V, SILICON, SIGNAL DIODE
封装: ROHS COMPLIANT, HERMETIC SEALED, PLASTIC, R-1, 2 PIN
文件页数: 2/2页
文件大小: 45K
代理商: 1E4
PAGE . 2
STAD-MAR.06.2009
1E1 ~ 1E6
RATING AND CHARACTERISTIC CURVES
FIG.2 MAXIMUM AVERAGE FORWARD CURRENT DERATING
LEAD TEMPERATURE, C
O
A
VERAGE
F
OR
W
A
RD
RECIFIED
CURRENT
AMPERES
0
0.5
1.0
1.5
20
40
60
80
100
120
140
160
180
SINGLE PHASE, HALF-WAVE, 60Hz RESISTIVE
OR INDUCTIVE LOAD P.C.B MOUNTED
ON 0.3 x 0.3" (8.0 x 8.0 mm)COPPER PAD AREAS
FIG.1 TYPICAL JUNCTION CAPACITANCE
REVERSE VOLTAGE, VOLTS
CAP
A
CIT
A
NCE,
p
F
NUMBER OF CYCLES AT 60Hz
FOR
W
A
RD
SURGE
C
URRENT
,A
MPERES
pk
(HALF-SING
W
A
VE)
FIG.5 MAXIMUM NON-REPEITIVE SURGE CURRENT
40 60 80 100
1
2
46
8 10
20
5
20
15
10
30
25
35
100
10
0.1
1
10
100
1
T= 25 C
f=1.0MHz
Vsig = 50mVp-p
J
O
FIG.3 TYPICAL REVERSE CHARACTERISTICS
PERCENT OF RATED PEAK INVERSE VOLTGE, VOLTS
INVST
ANT
A
NEOUS
REVERSE
CURRENT
,
MICROAMPERES
1000
100
10
1.0
0.1
20
40
60
80
100
120
T= 75 C
J
O
T= 25 C
J
O
T = 125 C
J
O
FIG.4 TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD VOLTAGE VOLTS
INST
ANT
A
NEOUS
F
OR
W
A
RD
CURRENT
,
AMPERES
0
0.8
1.6
2.4
3.2
0.1
1.0
10
300-400V
50-200V
600V
T=25 C
A
O
800V
0.4
1.2
2.0
2.8
相关PDF资料
PDF描述
1F1-E 1 A, 50 V, SILICON, SIGNAL DIODE
1F1-J 1 A, 50 V, SILICON, SIGNAL DIODE
1F3-E 1 A, 200 V, SILICON, SIGNAL DIODE
1F4-E 1 A, 400 V, SILICON, SIGNAL DIODE
1F4-I 1 A, 400 V, SILICON, SIGNAL DIODE
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