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参数资料
| 型号： | 1GH45 |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 1 A, 400 V, SILICON, SIGNAL DIODE |
| 封装： | LEAD FREE, 3-3E1A, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 214K |
| 代理商： | 1GH45 |
1GH45
2006-11-07
1
Unit: mm
TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE
1GH45
SWITCHING MODE POWER SUPPLY APPLICATIONS
Repetitive Peak Reverse Voltage
: VRRM = 400V
Average Forward Current
: IF (AV) = 1.0A
Very Fast Reverse Recovery Time
: trr = 200ns (Max)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak Reverse Voltage
VRRM
400
V
Average Forward Current
(Ta = 25°C)
IF (AV)
1.0
A
20 (50Hz)
Peak One Cycle Surge Forward
Current (NonRepetitive)
IFSM
22 (60Hz)
A
Junction Temperature Range
Tj
40~150
°C
Storage Temperature Range
Tstg
40~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN
TYP.
MAX
UNIT
Peak Forward Voltage
VFM
IFM = 1.0A
―
1.1
V
Repetitive Peak Reverse Current
IRRM
VRRM = 400V
―
100
μA
Reverse Recovery Time
trr
IF = 1A, di / dt = 30A / μs
―
200
ns
Forward Recovery Time
tfr
IF = 1.0A
―
400
ns
Thermal Resistance
Rth (ja)
Junction to Ambient
―
75
°C / W
MARKING
Abbreviation Code
Part No.
GH5
1GH45
JEDEC
―
JEITA
―
TOSHIBA
33E1A
Weight: 0.225g
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
GH5
Part No. (or abbreviation code)
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