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参数资料
| 型号： | 1N2129RA |
| 厂商： | VISHAY INTERTECHNOLOGY INC |
| 元件分类： | 整流器 |
| 英文描述： | 60 A, 100 V, SILICON, RECTIFIER DIODE, DO-203AB |
| 封装： | DO-5, 1 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 269K |
| 代理商： | 1N2129RA |
www.vishay.com
For technical questions, contact: ind-modules@vishay.com
Document Number: 93492
2
Revision: 24-Jun-08
1N1183, 1N3765, 1N1183A, 1N2128A Series
Vishay High Power Products Power Silicon Rectifier Diodes,
35 A/40 A/60 A
Notes
(1) JEDEC registered values
(2) I2t for time tx = I2√t x √tx
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
1N1183
1N3765 1N1183A 1N2128A
UNITS
Maximum average forward current
at case temperature
IF(AV)
1-phase operation,
180° sinusoidal conduction
35 (1)
40 (1)
60 (1)
A
140 (1)
150 (1)
140 (1)
°C
Maximum peak one cycle
non-repetitive surge current
IFSM
Half cycle 50 Hz
sine wave or 6 ms
rectangular pulse
Following any
rated load
condition and
with rated
VRRM applied
480
380
765
860
A
Half cycle 60 Hz
sine wave or 5 ms
rectangular pulse
500 (1)
400 (1)
800 (1)
900 (1)
Half cycle 50 Hz
sine wave or 6 ms
rectangular pulse
Following any
rated load
condition and
with VRRM
applied following
surge = 0
570
455
910
1000
Half cycle 60 Hz
sine wave or 5 ms
rectangular pulse
595
475
950
1050
Maximum I2t for fusing
I2t
t = 10 ms
With rated VRRM
applied following
surge, initial
TJ = TJ maximum
1140
730
2900
3700
A2s
t = 8.3 ms
1040
670
2650
3400
Maximum I2t for individual
device fusing
t = 10 ms
With VRRM = 0
following surge,
initial TJ =
TJ maximum
1610
1030
4150
5250
t = 8.3 ms
1470
940
3750
4750
Maximum I2
√t for individual
device fusing
I2
√t (2)
t = 0.1 to 10 ms,
VRRM = 0 following surge
16 100
10 300
41 500
52 500
A2
√s
Maximum peak forward voltage
at maximum forward current (IFM)
VFM
TJ = 25 °C
1.7 (1)
1.8 (1)
1.3 (1)
V
110
126
188
A
Maximum average
reverse current
VRRM = 700
IR(AV)
Maximum rated IF(AV) and TC
-5.0 (1)
--
mA
VRRM = 800
-
4.0 (1)
--
VRRM = 900
-
3.0 (1)
--
VRRM = 1000
-
2.0 (1)
--
Maximum rated IF(AV), VRRM and TC
10 (1)
-2.5 (1)
10 (1)
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相关代理商/技术参数 |
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| 1N213 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:silicon diode |
| 1N2130 | 制造商:Microsemi Corporation 功能描述:STD RECOVERY RECTFR 150V 70A 2PIN DO-203AB - Bulk |
| 1N2130A | 功能描述:整流器 150V 60A Std. Recovery RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| 1N2130AR | 功能描述:整流器 150V 60A REV Leads Std. Recovery RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| 1N2130R | 制造商:Microsemi Corporation 功能描述:STD RECOVERY RECTFR 150V 70A 2PIN DO-203AB - Bulk |
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