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参数资料
| 型号： | 1N23WGMR |
| 厂商： | ADVANCED SEMICONDUCTOR INC |
| 元件分类： | 参考电压二极管 |
| 英文描述： | SILICON, X-KU BAND, MIXER DIODE, DO-23 |
| 封装： | HERMETIC SEALED PACKAGE-2 |
| 文件页数： | 1/1页 |
| 文件大小： | 16K |
| 代理商： | 1N23WGMR |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. B
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C
NONE
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL
MAXIM
UNITS
NF
F = 9375 MHz
Plo = 1.0 mW
NFif = 1.5 dB
RL = 100
IF = 30 MHz
6.5
dB
VSWR
1.3
Z
IF
RL = 22
f = 1000 Hz
335
465
frange
8.0
12.4
GHz
SILICON MIXER DIODE
1N23WG
DESCRIPTION:
The
ASI 1N23WG is a Silicon Mixer
Diode Designed for Applications
Operating From 8.0 to 12.4 GHz.
FEATURES:
High burnout resistance
Low noise figure
Hermetically sealed package
Matched pairs available by adding
suffix “M” or “MR” for matched forward
and reverse
MAXIMUM RATINGS
IF
20 mA
VR
1.0 V
PDISS
2.0 (ERGS) @ TC = 25 °C
TJ
-55 °C to +150 °C
TSTG
-55 °C to +150 °C
PACKAGE STYLE DO- 23
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