参数资料
型号: 1N3612GP-E3/73
厂商: Vishay General Semiconductor
文件页数: 2/3页
文件大小: 67K
描述: DIODE GPP 1A 400V DO-204AL
标准包装: 3,000
二极管类型: 标准
电压 - (Vr)(最大): 400V
电流 - 平均整流 (Io): 1A
电压 - 在 If 时为正向 (Vf)(最大): 1V @ 1A
速度: 标准恢复 >500ns,> 200mA(Io)
反向恢复时间(trr): 2µs
电流 - 在 Vr 时反向漏电: 1µA @ 400V
安装类型: 通孔
封装/外壳: DO-204AL,DO-41,轴向
供应商设备封装: DO-204AL(DO-41)
包装: 带盒(TB)
‘? 1N3611G.P, 1N3612G.P, 1N3613G.P,1N3614GP,1N3957GP7 www'ViShay'C°m Vishay General Semiconductor
ELECTRICAL cHARAcTERIsTIcs (TA = 25 0C unless otherwise noted)
PARAMETER TEST CONDITIONS
Maximum instantaneousforward voltage
Maximum DC reverse
current at rated DCblocking voltage T
Typical reverse IF : 0.5 A, IR : 1.0 A,
recovew time In : 0.25 A
Typical junction 4 0 V 1 MHZ
capacitance ' ’
Nate(ii JEDEC registered values
THERMAL cHARAcTERIs cs (TA = 2
PARAMETER
Typical thermal resistance
Nate(i) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5 mm) lead length, PCB mounted
PREFERRED P/N UNIT wEIGHT (g) PREFERRED PACKAGE CODE DELIVERY MODE
1N3612GP-E3/54 13“ diameter paper tape and reel
1N3612GP-E3/73 Ammo pack packaging
1N3612GPHE3/54 ii) I 13“ diameter paper tape and reel
1N3612GPHE3/73 ii) p Ammo paCk packaging
N Ute(ll AEC-Q101 qumnied
RATINGS AND CHARACTERISTICS cuRvEs (TA = 25 0C unless otherwise noted)
1.0 30
g TJ : T J Max.
E i 5.3 ms Single Hall Sinerwave
E E 25
O t:
E E‘): 20
§ :3E E 15
1“ (U
|L U.
§ § 10
E D- I
>
<(5
u 25 50 75 100 125 I50 175 10Ambient Temperature (°C) Number or Cycles at 60 Hz
Fig. 1 — Max. FonNard Current Derating Fig. 2 - Maximum Non-repetitive Peak Forward Surge Current
Revision: 11-Dec-13 2 Document Number: 88502
For technical questions within your region: DiodesAmericas@vishay.cOm, DiOdesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT To CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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