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参数资料
| 型号： | 1N3614GP/4H |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AL |
| 封装： | PLASTIC, DO-41, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 328K |
| 代理商： | 1N3614GP/4H |
1N3611GP thru 1N3614GP and 1N3957GP
Document Number 88502
14-Sep-05
Vishay General Semiconductor
www.vishay.com
1
Pat
ente
d*
DO-204AL (DO-41)
* Glass-plastic encapsulation
technique is covered by
Patent No. 3,996,602,
brazed-lead assembly
by Patent No. 3,930,306
Glass Passivated Junction Rectifier
Major Ratings and Characteristics
IF(AV)
1.0 A
VRRM
200 V to 1000 V
IFSM
30 A
IR
1.0 A
VF
1.0 V
Tj max.
175 °C
Features
Superectifier structure for High Reliability
application
Cavity-free glass-passivated junction
Low forward voltage drop
Low leakage current, IR less than 0.1 A
High forward surge capability
Meets environmental standard MIL-S-19500
Solder Dip 260 °C, 40 seconds
Typical Applications
For use in general purpose rectification of power sup-
plies, inverters, converters and freewheeling diodes
application
Mechanical Data
Case: DO-204AL, molded epoxy over glass body
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes cathode end
Maximum Ratings
(TA = 25 °C unless otherwise noted)
Parameter
Symbol
1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3957GP
Unit
* Maximum repetitive peak reverse voltage
VRRM
200
400
600
800
1000
V
* Maximum RMS voltage
VRMS
140
280
420
560
700
V
* Maximum DC blocking voltage
VDC
200
400
600
800
1000
A
* Maximum average forward rectified current
0.375" (9.5 mm) lead length at TA = 75 °C
IF(AV)
1.0
A
* Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
IFSM
30
A
Operating junction and storage temperature range TJ, TSTG
- 65 to + 175
°C
相关PDF资料 |
PDF描述 |
|---|---|
| 1N3614GP/72 | 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AL |
| 1N3614GP/4E | 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AL |
| 1N3614GP/58 | 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AL |
| 1N3614GP/90 | 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AL |
| 1N3614GP/56 | 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AL |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N3614GP-M3/54 | 功能描述:DIODE GEN PURPOSE DO-204AL 制造商:vishay semiconductor diodes division 系列:* 零件状态:停產 标准包装:5,500 |
| 1N3614GP-M3/73 | 功能描述:DIODE GEN PURPOSE DO-204AL 制造商:vishay semiconductor diodes division 系列:* 零件状态:停產 标准包装:3,000 |
| 1N3614J | 制造商:MILITARY SPECIFICATIONS P 功能描述: |
| 1N3614JAN | 制造商:Microsemi Corporation 功能描述: |
| 1N3614JANTX | 制造商:Microwave Semiconductor 功能描述: |
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