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参数资料
| 型号： | 1N4006 |
| 厂商： | RECTRON LTD |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 1 A, 800 V, SILICON, SIGNAL DIODE, DO-41 |
| 封装： | PLASTIC PACKAGE-2 |
| 文件页数： | 1/2页 |
| 文件大小： | 22K |
| 代理商： | 1N4006 |
SILICON RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FEATURES
* Low cost
* Low leakage
* Low forward voltage drop
* High current capability
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: Device has UL flammability classification 94V-O
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.33 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
1N4001
THRU
1N4007
DO-41
MAXIMUM RATINGS (At TA = 25
oC unless otherwise noted)
NOTES : Measured at 1 MHZ and applied reverse voltage of 4.0 volts
ELECTRICAL CHARACTERISTICS (At TA = 25
oC unless otherwise noted)
Dimensions in inches and (millimeters)
2002-11
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at TA = 75
oC
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note)
Operating and Storage Temperature Range
SYMBOL
VRRM
VDC
IO
IFSM
CJ
TJ, TSTG
VRMS
Volts
Amps
1.0
30
15
-55 to + 150
Amps
pF
0 C
UNITS
Typical Thermal Resistance
R
θ JA
50
0C/ W
50
100
200
400
600
800
1000
70
35
140
280
420
700
560
50
200
400
600
800
1000
100
1N4001
1N4002
1N4003
1N4004
1N4005
1N4006
1N4007
at Rated DC Blocking Voltage
CHARACTERISTICS
Maximum Full Load Reverse Current Average, Full Cycle
.375” (9.5mm) lead length at TL = 75
oC
VF
SYMBOL
IR
UNITS
1.1
5.0
30
uAmps
Maximum DC Reverse Current
Maximum Instantaneous Forward Voltage at 1.0A DC
Volts
@TA = 25
oC
@TA = 100
oC
1N4001
1N4002
1N4003
1N4004
1N4005
1N4006
1N4007
50
1.0 (25.4)
MIN.
.166 (4.2)
.205 (5.2)
1.0 (25.4)
MIN.
.107 (2.7)
.080 (2.0)
DIA.
.034 (0.9)
.028 (0.7)
DIA.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N4006- | 制造商:TAIW 功能描述:General Purpose 800V Through Hole Rectifier DO-41 1.0A |
| 1N4006 _AY _10001 | 制造商:PanJit Touch Screens 功能描述: |
| 1N4006 BK | 功能描述:DIODE GEN PURP 800V 1A DO41 制造商:central semiconductor corp 系列:- 包装:散装 零件状态:生命周期结束 二极管类型:标准 电压 - DC 反向（Vr）（最大值）:800V 电流 - 平均整流（Io）:1A 不同 If 时的电压 - 正向（Vf）:1.1V @ 1A 速度:标准恢复 >500ns，> 200mA（Io） 反向恢复时间（trr）:- 不同?Vr 时的电流 - 反向漏电流:5μA @ 800V 不同?Vr，F 时的电容:- 安装类型:通孔 封装/外壳:DO-204AL，DO-41，轴向 供应商器件封装:DO-41 工作温度 - 结:-65°C ~ 175°C 标准包装:2,000 |
| 1N4006 R0 | 制造商:SPC Multicomp 功能描述:DIODE 1A 800V REEL 5K |
| 1N4006 TR | 功能描述:DIODE GEN PURP 800V 1A DO41 制造商:central semiconductor corp 系列:- 包装:带卷（TR） 零件状态:生命周期结束 二极管类型:标准 电压 - DC 反向（Vr）（最大值）:800V 电流 - 平均整流（Io）:1A 不同 If 时的电压 - 正向（Vf）:1.1V @ 1A 速度:标准恢复 >500ns，> 200mA（Io） 反向恢复时间（trr）:- 不同?Vr 时的电流 - 反向漏电流:5μA @ 800V 不同?Vr，F 时的电容:- 安装类型:通孔 封装/外壳:DO-204AL，DO-41，轴向 供应商器件封装:DO-41 工作温度 - 结:-65°C ~ 175°C 标准包装:5,000 |
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