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参数资料
| 型号： | 1N4006 |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 1 A, 800 V, SILICON, SIGNAL DIODE, DO-41 |
| 文件页数： | 1/2页 |
| 文件大小： | 61K |
| 代理商： | 1N4006 |
MAXIMUM RATINGS& ELECTRICAL CHARACTERISTICS
FEATURES
Data Sheet No. GPDP-101-1B
MECHANICAL SPECIFICATION
Ratings at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive loads, derate current by 20%.
Tel.: (310) 767-1052
Fax: (310) 767-7958
DIOTEC ELECTRONICS CORP.
Gardena, CA 90248
U.S.A
18020 Hobart Blvd., Unit B
Average Forward Rectified Current@ T = 75 C
(Lead length= 0.375 in. (9.5 mm))
A
o
PARAMETER (TEST CONDITIONS)
Maximum DC Blocking Voltage
Peak Forward Surge Current (8.3 mSec single half sine wave
superimposed on rated load)
Maximum Forward Voltage at1 Amp DC
Typical Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Maximum Average DC Reverse Current
At Rated DC Blocking Voltage
Maximum Peak Recurrent Reverse Voltage
Maximum RMS Voltage
Series Number
IRM
IRM(AV)
R
θJA
T T
J,
STG
IO
VRMS
VRRM
VRM
SYMBOL
RATINGS
VOLTS
°C/W
°C
AMPS
UNITS
VOLTS
A
VFM
IFSM
Typical Junction Capacitance (Note 2)
CJ
pF
200
400
140
280
200
800
560
800
400
1
50
1
30
5
50
30
26
-65 to +175
4.97fgpdp101
(1) Lead length= 0.375 in. (9.5 mm)
(2) Measured at 1MHz& applied reverse voltage of4 volts
NOTES:
@ T= 25 C
A
o
@ T = 100 C
A
o
Low cost
Low leakage
Low forward voltage drop
High current capacity
Easily cleaned with freon, alcohol, chlorothene and similar
solvents
Case: JEDEC DO-41, molded plastic (U/L Flammability Rating 94V-0)
Terminals: Plated axial leads
Soldering: Per MIL-STD 202 Method 208 guaranteed
Polarity: Color band denotes cathode
Mounting Position: Any
Weight: 0.012 Ounces (0.34 Grams)
H1
MECHANICAL DATA
ACTUAL SIZE OF
DO-41 PACKAGE
Sym
In
mm
Minimum
Maximum
BL
BD
LL
LD
1.00
0.028
In
mm
0.107
0.205
0.034
5.2
2.7
0.86
0.160
0.103
25.4
0.71
4.1
2.6
Color Band
Denotes
Cathode
LD (Dia)
BD (Dia)
LL
BL
LL
Maximum Full Cycle Reverse Current@ T = 75 C (Note 1)
L
o
1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007
50
35
50
100
70
100
600
420
600
1000
700
1000
SERIES 1N4001- 1N4007
DO- 41
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N4006- | 制造商:TAIW 功能描述:General Purpose 800V Through Hole Rectifier DO-41 1.0A |
| 1N4006 _AY _10001 | 制造商:PanJit Touch Screens 功能描述: |
| 1N4006 BK | 功能描述:DIODE GEN PURP 800V 1A DO41 制造商:central semiconductor corp 系列:- 包装:散装 零件状态:生命周期结束 二极管类型:标准 电压 - DC 反向（Vr）（最大值）:800V 电流 - 平均整流（Io）:1A 不同 If 时的电压 - 正向（Vf）:1.1V @ 1A 速度:标准恢复 >500ns，> 200mA（Io） 反向恢复时间（trr）:- 不同?Vr 时的电流 - 反向漏电流:5μA @ 800V 不同?Vr，F 时的电容:- 安装类型:通孔 封装/外壳:DO-204AL，DO-41，轴向 供应商器件封装:DO-41 工作温度 - 结:-65°C ~ 175°C 标准包装:2,000 |
| 1N4006 R0 | 制造商:SPC Multicomp 功能描述:DIODE 1A 800V REEL 5K |
| 1N4006 TR | 功能描述:DIODE GEN PURP 800V 1A DO41 制造商:central semiconductor corp 系列:- 包装:带卷（TR） 零件状态:生命周期结束 二极管类型:标准 电压 - DC 反向（Vr）（最大值）:800V 电流 - 平均整流（Io）:1A 不同 If 时的电压 - 正向（Vf）:1.1V @ 1A 速度:标准恢复 >500ns，> 200mA（Io） 反向恢复时间（trr）:- 不同?Vr 时的电流 - 反向漏电流:5μA @ 800V 不同?Vr，F 时的电容:- 安装类型:通孔 封装/外壳:DO-204AL，DO-41，轴向 供应商器件封装:DO-41 工作温度 - 结:-65°C ~ 175°C 标准包装:5,000 |
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