参数资料
型号: 1N4007
元件分类: 二极管(射频、小信号、开关、功率)
英文描述: 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41
封装: ROHS COMPLIANT, PLASTIC PACKAGE-2
文件页数: 1/2页
文件大小: 58K
代理商: 1N4007
PAGE . 1
June 29,2010-REV.02
1N4001-1N4007
FEATURES
Low forward voltage drop
High current capability
High reliability
High surge current capability
Exceeds environmental standards of MIL-S-19500/228
In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
Case: DO-41 Molded plastic
Epoxy: UL 94V-O rate flame retardant.
Lead: Axial leads, solderable per MIL-STD-750,Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 0.012 ounces, 0.30 gram
PLASTIC SILICON RECTIFIERS
NOTES:
1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.
2. Thermal Resistance from Junction to Ambient and from junction to lead at 0.375”(9.5mm)lead length P.C.B.mounted.
DO-41
Unit: inch(mm)
.034(.86)
.107(2.7)
.028(.71)
.080(2.0)
1.
0(
25
.4
)M
IN
.
1.
0(
25
.4
)M
IN
.
.20
5(
5.2)
.16
0(
4.1)
VOLTAGE
50 to 1000 Volts
CURRENT
1.0 Amperes
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load,derate current by 20%.
PA RA M E TE R
S YM B O L 1N400 1 1 N4 0 0 2 1 N4 003 1N4 004 1N4 005 1N4006 1N4007
UNITS
M a xi m um Re c ur r e nt P eak R e ve r s e Vo ltage
V
RRM
50
100
200
400
600
800
1000
V
M a xi mum RM S Vo lt ag e
V
RMS
35
70
140
280
420
560
700
V
M a xi m um D C B loc ki ng Vo ltage
V
DC
50
100
200
400
600
800
1000
V
M a xi m um A ver age F o r war d
C ur r ent . 375"( 9 .5 m m )
lead le ng t h at T
A =7 5
O C
I
F(A V )
1. 0
A
P eak F o r war d S ur ge C ur r e nt : 8. 3m s s i ng le ha lf s i ne -
wa ve super i m pos ed on r a t ed load ( J E D E C m e t hod)
I
FSM
30
A
M a xi m um F o r war d Vo ltage at 1. 0A
V
F
1. 1
V
M a xi m um D C Re ve r s e C ur r ent at Ra t e d
D C B loc k i ng Vo lt age
T
J =2 5
O C
T
J = 100
OC
I
R
5. 0
500
μA
Typi c a l Junc t i on C apac i tanc e ( Note 1)
C
J
15
pF
Typi c a l Ther m a l Re s i s t anc e ( Not e 2)
R
θJA
R
θJC
R
θJL
11 0
40
35
OC / W
Oper ati ng J unc ti on and S t or age Te m per at ur e Ra ng e
T
J ,T STG
- 55 t o + 150
OC
相关PDF资料
PDF描述
1N4002 1 A, SILICON, SIGNAL DIODE, DO-41
1N4006 1 A, SILICON, SIGNAL DIODE, DO-41
1N4007 1 A, SILICON, SIGNAL DIODE, DO-41
1N5393 1.5 A, 200 V, SILICON, RECTIFIER DIODE, DO-41
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1N4007 A0 制造商:Taiwan Semiconductor 功能描述:Diode 1KV 1A 2-Pin DO-41 Ammo
1N4007 BK 功能描述:DIODE GPP 1A 1000V DO41 AXIAL 制造商:central semiconductor corp 系列:- 包装:散装 零件状态:在售 二极管类型:标准 电压 - DC 反向(Vr)(最大值):1000V 电流 - 平均整流(Io):1A 不同 If 时的电压 - 正向(Vf:1.1V @ 1A 速度:标准恢复 >500ns,> 200mA(Io) 不同?Vr 时的电流 - 反向漏电流:5μA @ 1000V 不同?Vr,F 时的电容:- 安装类型:通孔 封装/外壳:DO-204AL,DO-41,轴向 供应商器件封装:DO-41 工作温度 - 结:-65°C ~ 175°C 标准包装:2,000
1N4007 R0 制造商:SKMI/Taiwan 功能描述:Diode 1KV 1A 2-Pin DO-41 T/R 制造商:SPC Multicomp 功能描述:DIODE 1A 1000V REEL 5K 制造商:Taiwan Semiconductor 功能描述:Diode 1KV 1A 2-Pin DO-41 T/R
1N4007 TR 功能描述:DIODE GEN PURP 1KV 1A DO41 制造商:central semiconductor corp 系列:- 包装:带卷(TR) 零件状态:新产品 二极管类型:标准 电压 - DC 反向(Vr)(最大值):1000V(1kV) 电流 - 平均整流(Io):1A 不同 If 时的电压 - 正向(Vf):1.1V @ 1A 速度:标准恢复 >500ns,> 200mA(Io) 反向恢复时间(trr):- 不同?Vr 时的电流 - 反向漏电流:5μA @ 1000V 不同?Vr,F 时的电容:- 安装类型:通孔 封装/外壳:DO-204AL,DO-41,轴向 供应商器件封装:DO-41 工作温度 - 结:-65°C ~ 175°C 标准包装:5,000