- 您现在的位置：买卖IC网 > PDF目录298176 > 1N4007GPT26A (FAIRCHILD SEMICONDUCTOR CORP) 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41 PDF资料下载
参数资料
| 型号： | 1N4007GPT26A |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41 |
| 文件页数： | 1/3页 |
| 文件大小： | 41K |
| 代理商： | 1N4007GPT26A |
1N4001GP-1N4007GP
1N4001GP-1N4007GP, Rev. C
2001 Fairchild Semiconductor Corporation
1N4001GP - 1N4007GP
General Purpose Rectifiers (Glass Passivated)
Absolute Maximum Ratings*
T
A
= 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Features
Low forward voltage drop.
High surge current capability.
High reliability.
High current capability.
Symbol
Parameter
Device
Units
4001GP 4002GP
4003G
4004GP
4005GP
4006GP 4007GP
V
F
Forward Voltage @ 1.0 A
1.1
V
I
R
Reverse Current @ rated V
R TA = 25°C
T
A = 125°C
5.0
50
A
C
T
Total Capacitance
V
R = 4.0 V, f = 1.0 MHz
8.0
pF
DO-41
COLOR BAND DENOTES CATHODE
Symbol
Parameter
Value
Units
4001GP 4002GP
4003G
4004GP
4005GP
4006GP 4007GP
V
RRM
Maximum Repetitive Reverse Voltage
50
100
200
400
600
800
1000
V
I
F(AV)
Average Rectified Forward Current,
.375 " lead length @ T
A = 75°C
1.0
A
I
FSM
Non-repetitive Peak Forward Surge
Current
8.3 ms Single Half-Sine-Wave
30
A
T
stg
Storage Temperature Range
-65 to +175
°C
T
J
Operating Junction Temperature
-65 to +175
°C
Symbol
Parameter
Value
Units
PD
Power Dissipation
3.0
W
RθJA
Thermal Resistance, Junction to Ambient
50
°C/W
Thermal Characteristics
相关PDF资料 |
PDF描述 |
|---|---|
| 1N4003CSM4-JQR-BG4 | 1 A, 200 V, SILICON, SIGNAL DIODE |
| 1N4003DCSMG4 | 1 A, 200 V, 2 ELEMENT, SILICON, SIGNAL DIODE |
| 1N4003CSM4G4 | 1 A, 200 V, SILICON, SIGNAL DIODE |
| 1N4003GP-BP | 1 A, 200 V, SILICON, SIGNAL DIODE, DO-41 |
| 1N4003S | 1 A, 200 V, SILICON, SIGNAL DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N4007GP-TP | 功能描述:整流器 1000V,1A RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| 1N4007GP-TR | 制造商:Vishay Semiconductors 功能描述:1A,1000V,STD.SUPERECT. - Tape and Reel |
| 1N4007GR0 | 制造商:Taiwan Semiconductor 功能描述:Diode 1KV 1A 2-Pin DO-41 |
| 1N4007G-T | 功能描述:整流器 1.0A 1000V RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| 1N4007G-T-S-NT | 功能描述:整流器 GP, Junc Plas Rect 1A,1000V RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。