参数资料
型号: 1N4148CSM-JQRS.XRAY
厂商: SEMELAB LTD
元件分类: 二极管(射频、小信号、开关、功率)
英文描述: 0.2 A, 75 V, SILICON, SIGNAL DIODE
封装: HERMETIC SEALED, CERAMIC, LCC1-3
文件页数: 1/4页
文件大小: 565K
代理商: 1N4148CSM-JQRS.XRAY
SILICON EPITAXIAL
PLANAR DIODE
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 7789
Issue 2
Page 1 of 4
1N4148CSM
Low Leakage
Fast Switching
Low Forward Voltage
Hermetic Ceramic Surface Mount Package
Suitable for general purpose, switching applications.
Screening Options Available
ABSOLUTE MAXIMUM RATINGS (T
A = 25°C unless otherwise stated)
VBR
Breakdown Voltage
100V
VRWM
Working Peak Reverse Voltage
75V
IO(1)
Average Rectified Output Current, TA = 75°C
200mA
IFSM
Surge Current, half sine wave, tp = 8.3ms
2A
PD(1)
Total Power Dissipation at
TA = 75°C
385mW
Derate Above 75°C
3.08mW/°C
PD
Total Power Dissipation at
TSP = 75°C
1.042W
Derate Above 75°C
8.33mW/°C
TJ
Junction Temperature Range
-65 to +200°C
Tstg
Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols
Parameters
Min.
Typ.
Max.
Units
RθJA(PCB)
(1)
Thermal Resistance, Junction To Ambient, On PCB
325
°C/W
RθJSP
Thermal Resistance, Junction To Solder Pads
120
°C/W
Notes
(1)
PCB = FR4 – 0.0625 Inch (1.59mm), 1 Layer, 1.0-Oz Cu, horizontal, in still air.
RθJA with a defined PCB thermal resistance condition included, is measured at IO = 200mA.
相关PDF资料
PDF描述
1N4148G-CA2-R 0.2 A, 100 V, SILICON, SIGNAL DIODE
1N4148L-CA2-R 0.2 A, 100 V, SILICON, SIGNAL DIODE
1N4148T-12 0.15 A, 100 V, SILICON, SIGNAL DIODE, DO-35
1N4150T-88 0.2 A, 50 V, SILICON, SIGNAL DIODE, DO-35
1N4153T-15A 0.15 A, 75 V, SILICON, SIGNAL DIODE, DO-35
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