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参数资料
| 型号： | 1N4150 |
| 英文描述： | PTSA 1.5/ 4-3.5-F MIX NZ09 |
| 中文描述： | 硅平面二极管外延 |
| 文件页数： | 1/2页 |
| 文件大小： | 33K |
| 代理商： | 1N4150 |
MILLIMETERS
INCHES
DIM
MIN
MAX
MIN
MAX
D
1.60
1.70
0.063 0.067
F
0.41
0.55
0.016 0.022
G
3.30
3.70
.130
.146
G1
2.54 REF.
.100 REF.
S
0.03 MIN.
.001 MIN.
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: mail@cdi-diodes.com
1N4150UR-1 AVAILABLE IN
JAN, JANTX, AND JANTXV
PER MIL-PRF-19500/231
SWITCHING DIODE
HERMETICALLY SEALED
METALLURGICALLY BONDED
DOUBLE PLUG CONSTRUCTION
FIGURE 1
DESIGN DATA
CASE: DO-213AA, Hermetically sealed
glass case. (MELF, SOD-80; LL34)
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE (ROJEC):
100 °C/W maximum AT L = 0
THERMAL IMPEDANCE: (ZOJX): 70
C/W maximum
POLARITY: Cathode end is banded.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) Of this Device is Approximately
+6PPM/°C. The COE of the Mounting
Surface System Should Be Selected To
Provide A Suitable Match With This
Device.
1N4150UR-1
1N3600UR
CDLL4150
CDLL3600
V F1
V F2
V F3
V F4
V F5
Limits
I F = 1 mA dc
I F = 10 mA dc
I F = 50 mA dc
I F = 100 mA dc I F = 200 mA dc
(Pulsed)
V dc
minimum
0.540
0.680
0.780
0.820
0.870
maximum
0.620
0.740
0.860
0.920
1.000
Type
V BR
V RWM
I R1
1 R2
Ctrr
VR = 50 V dc
VR = 0; f = 1 Mhz; IF=IR=10to100mAdc
IR = 10 A
TA = 25°C
TA = 150°C
ac signals = 50 m V (p-p)
R L = 100 ohms
V dc
V (pk)
A dc
pF
ns
CDLL3600
75
50
0.1
100
2.5
4
CDLL4150,-1
75
50
0.1
100
2.5
4
MAXIMUM RATINGS
Junction Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Operating Current: 300 mA @ TA = + 25°C
Derating: 3.1 mA dc/°C Above TEC = + 110°C
Forward Surge Current: 4A, (tp = 1s); 0.5A (tp = 1s)
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specied.
FORWARD VOLTAGE LIMITS – ALL TYPES
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N4150 _AY _10001 | 制造商:PanJit Touch Screens 功能描述: |
| 1N4150 TR | 功能描述:DIODE GEN PURP 50V 200MA DO35 制造商:central semiconductor corp 系列:- 包装:剪切带（CT） 零件状态:有效 二极管类型:标准 电压 - DC 反向（Vr）（最大值）:50V 电流 - 平均整流（Io）:200mA 不同 If 时的电压 - 正向（Vf）:1V @ 200mA 速度:小信号 =< 200mA（Io），任意速度 反向恢复时间（trr）:6ns 不同?Vr 时的电流 - 反向漏电流:100nA @ 50V 不同?Vr，F 时的电容:2.5pF @ 0V，1MHz 安装类型:通孔 封装/外壳:DO-204AH，DO-35，轴向 供应商器件封装:DO-35 工作温度 - 结:-65°C ~ 200°C 标准包装:1 |
| 1N4150 | 制造商:Fairchild Semiconductor Corporation 功能描述:SILICON DIODES 300MA |
| 1N4150 | 制造商:Fairchild Semiconductor Corporation 功能描述:DIODES SMALL SIGNAL ROHS COMPLIANT:NO |
| 1N4150.TR | 制造商:Fairchild Semiconductor Corporation 功能描述:0.2 A, SILICON, SIGNAL DIODE, DO-35 |
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