参数资料
型号: 1N4454_T50R
厂商: Fairchild Semiconductor
文件页数: 1/2页
文件大小: 19K
描述: DIODE HI CONDUCTANCE 50V DO-35
标准包装: 30,000
二极管类型: 标准
电压 - (Vr)(最大): 50V
电流 - 平均整流 (Io): 200mA
电压 - 在 If 时为正向 (Vf)(最大): 1V @ 10mA
速度: 小信号 =< 200mA(Io),任意速度
反向恢复时间(trr): 4ns
电流 - 在 Vr 时反向漏电: 100nA @ 50V
电容@ Vr, F: 4pF @ 0V,1MHz
安装类型: 通孔
封装/外壳: DO-204AH,DO-35,轴向
供应商设备封装: DO-35
包装: 带卷 (TR)
1N4454
1N4454
DO-35
High Conductance Ultra Fast Diode
Sourced from Process 1R. See MMBD1201-1205 for characteristics.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol Parameter Value Units
WIV
Working Inverse Voltage 50 V
IO
Average Rectified Current 200 mA
IF
DC Forward Current 400 mA
if
Recurrent Peak Forward Current 600 mA
if(surge)
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
1.0
4.0
A
A
Tstg
Storage Temperature Range -65 to +200
°C
TJ
Operating Junction Temperature 175
°C
Symbol Characteristic Max Units
1N4454
PD
Total Device Dissipation
Derate above 25°C
500
3.33
mW
mW/°C
RθJA
Thermal Resistance, Junction to Ambient 300
°C/W
Discrete POWER & Signal
Technologies
?1997 Fairchild Semiconductor Corporation
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1N4454-TAP 功能描述:整流器 Vr/100V Io/10mA RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel
1N4454-TP 制造商:Micro Commercial Components (MCC) 功能描述:Diode Switching 75V 0.15A 2-Pin DO-35 T/R
1N4454TR 功能描述:整流器 Vr/75V Io/200mA T/R RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel
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