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参数资料
| 型号： | 1N458.TR |
| 厂商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 0.2 A, 150 V, SILICON, SIGNAL DIODE, DO-35 |
| 文件页数： | 1/2页 |
| 文件大小： | 36K |
| 代理商： | 1N458.TR |
Discrete POWER & Signal
Technologies
N
High Conductance Low Leakage Diode
Sourced from Process 1M.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
WIV
Working Inverse Voltage
456/A
457/A
458/A
459/A
25
60
125
175
V
IO
Average Rectified Current
200
mA
IF
DC Forward Current
500
mA
if
Recurrent Peak Forward Current
600
mA
if(surge)
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
1.0
4.0
A
Tstg
Storage Temperature Range
-65 to +200
°C
TJ
Operating Junction Temperature
175
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
1N / FDLL 456/A - 459/A
PD
Total Device Dissipation
Derate above 25
°C
500
3.33
mW
mW/
°C
RθJA
Thermal Resistance, Junction to Ambient
300
°C/W
1N/FDLL 456/A - 1N/FDLL 459/A
1N/FDLL
456/A
/
457/A
/
458/A
/
459/A
LL-34
THE PLACEMENT OF THE EXPANSION GAP
HAS NO RELATIONSHIP TO THE LOCATION
OF THE CATHODE TERMINAL
DO-35
COLOR BAND MARKING
DEVICE
1ST BAND 2ND BAND
FDLL456
BROWN
WHITE
FDLL456A
BROWN
WHITE
FDLL457
RED
BLACK
FDLL457A
RED
BLACK
FDLL458
RED
BROWN
FDLL458A
RED
BROWN
FDLL459
RED
FDLL459A
RED
相关PDF资料 |
PDF描述 |
|---|---|
| 1N458A.TR | 0.2 A, 150 V, SILICON, SIGNAL DIODE, DO-35 |
| 1N459.TR | 0.2 A, 200 V, SILICON, SIGNAL DIODE, DO-35 |
| 1N456A.TR | 0.2 A, 30 V, SILICON, SIGNAL DIODE, DO-35 |
| 1N457A | 0.2 A, 70 V, SILICON, SIGNAL DIODE, DO-35 |
| 1N459 | 0.2 A, 200 V, SILICON, SIGNAL DIODE, DO-35 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N459 | 功能描述:整流器 High Conductance Low Leakage RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| 1N459 | 制造商:Fairchild Semiconductor Corporation 功能描述:DIODES SMALL SIGNAL ROHS COMPLIANT:NO |
| 1N459_T50R | 功能描述:整流器 High Conductance Low Leakage RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| 1N4590 | 功能描述:整流器 SI STND RECOV DO-8 200-1400V 150A 400PV RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| 1N4590R | 功能描述:整流器 SI STND RECOV DO-8 200-1400V 150A 400PV RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
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