参数资料
型号: 1N4698
厂商: VISHAY SEMICONDUCTORS
元件分类: 参考电压二极管
英文描述: 11 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
封装: ROHS COMPLIANT, GLASS PACKAGE-2
文件页数: 3/7页
文件大小: 275K
代理商: 1N4698
1N4678 to 1N4717
Document Number 85586
Rev. 1.4, 18-Feb-05
Vishay Semiconductors
www.vishay.com
3
Typical Characteristics (Tamb = 25
°C unless otherwise specified)
Figure 1. Total Power Dissipation vs. Ambient Temperature
Figure 2. Typical Change of Working Voltage under Operating
Conditions at Tamb=25°C
Figure 3. Typical Change of Working Voltage vs. Junction
Temperature
0
40
80
120
160
0
100
300
400
500
600
P
T
otal
Power
Dissipation
(
m
W
)
tot
Tamb– Ambient Temperature(°C )
200
95 9602
200
0
5
10
15
20
1
10
100
1000
V
V
oltage
Change
(
m
V
)
Z
VZ – Z-Voltage(V)
25
95 9598
IZ=5mA
Tj=25°C
–60
0
60
120
180
0.8
0.9
1.0
1.1
1.2
1.3
V
Relative
V
oltage
Change
Ztn
Tj – Junction Temperature (°C )
240
95 9599
VZtn=VZt/VZ(25°C)
TKVZ=10 x 10–4/K
8x 10–4/K
–4 x 10–4/K
6x 10–4/K
4x 10–4/K
2x 10–4/K
–2 x 10–4/K
0
Figure 4. Temperature Coefficient of Vz vs. Z-Voltage
Figure 5. Diode Capacitance vs. Z-Voltage
Figure 6. Forward Current vs. Forward Voltage
010
20
30
–5
0
5
10
15
T
K
T
emperature
Coef
ficient
of
V
(
10
/K
)
VZ
VZ – Z-Voltage(V)
50
95 9600
40
Z
–4
IZ=5mA
0
5
10
15
0
50
100
150
200
C
Diode
Capacitance
(
p
F
)
D
VZ – Z-Voltage(V)
25
95 9601
20
Tj=25°C
VR=2V
0
0.2
0.4
0.6
0.8
0.001
0.01
0.1
1
10
100
1.0
95 9605
I
Forward
Current
(
m
A
)
F
VF – Forward Voltage(V)
Tj=25°C
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