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参数资料
| 型号： | 1N4730ACTA |
| 厂商： | MOTOROLA INC |
| 元件分类： | 齐纳二极管 |
| 英文描述： | 3.9 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41 |
| 文件页数： | 4/6页 |
| 文件大小： | 55K |
| 代理商： | 1N4730ACTA |
GENERAL DATA — 500 mW DO-35 GLASS
Motorola TVS/Zener Device Data
6-4
500 mW DO-35 Glass Data Sheet
Figure 10. Typical Forward Characteristics
VF, FORWARD VOLTAGE (VOLTS)
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1000
500
200
100
50
20
10
5
2
1
I F
,FOR
W
ARD
CURRENT
(mA)
MAXIMUM
150
°C
75
°C
0
°C
25
°C
Figure 6. Effect of Zener Current
on Zener Impedance
Figure 7. Effect of Zener Voltage
on Zener Impedance
Figure 9. Typical Capacitance versus VZ
Figure 8. Typical Leakage Current
1000
500
200
100
50
20
10
5
2
1
0.1
0.2
0.5
1
2
5
10
20
50
100
IZ, ZENER CURRENT (mA)
Z
,DYNAMIC
IMPEDANCE
(OHMS)
1000
700
500
200
100
70
50
20
10
7
5
2
1
2
100
VZ, ZENER CURRENT (mA)
35
7
10
20
30
50
70
Z
,DYNAMIC
IMPEDANCE
(OHMS)
10000
7000
5000
2000
1000
700
500
200
100
70
50
20
10
7
5
2
1
0.7
0.5
0.2
0.1
0.07
0.05
0.02
0.01
0.007
0.005
0.002
0.001
I R
,LEAKAGE
CURRENT
(
A)
3
456
78
9
10
11
12
13
14
15
VZ, NOMINAL ZENER VOLTAGE (VOLTS)
+25
°C
+125
°C
TYPICAL LEAKAGE CURRENT
AT 80% OF NOMINAL
BREAKDOWN VOLTAGE
TJ = 25°C
iZ(rms) = 0.1 IZ(dc)
f = 60 Hz
6.2 V
27 V
VZ = 2.7 V
47 V
TJ = 25°C
iZ(rms) = 0.1 IZ(dc)
f = 60 Hz
20 mA
5 mA
IZ = 1 mA
0 V BIAS
1 V BIAS
400
300
200
100
50
20
10
8
4
1
2
5
10
20
50
100
VZ, NOMINAL VZ (VOLTS)
C,
CAP
ACIT
ANCE
(pF)
50% OF BREAKDOWN BIAS
MINIMUM
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N4730AE3/TR13 | 制造商:Microsemi Corporation 功能描述:1.0W, VZ = 3.9V, ? 5% - Tape and Reel 制造商:Microsemi Corporation 功能描述:DIODE ZENER 1.0W 3.9V 5% DO41 |
| 1N4730AG | 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:VOLTAGE 3.3 ~ 56 V, 1 W Hermetically Sealed Glass Zener Voltage Regulators |
| 1N4730A-G | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SILICON ZENER DIODE |
| 1N4730A-G _AY _10001 | 制造商:PanJit Touch Screens 功能描述: |
| 1N4730A-G_ R2 _10001 | 制造商:PanJit Touch Screens 功能描述: |
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