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参数资料
| 型号： | 1N4756CUR-1TRE3 |
| 厂商： | MICROSEMI CORP-LAWRENCE |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 47 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AB |
| 封装： | ROHS COMPLIANT, HERMETIC SEALED, GLASS, MELF-2 |
| 文件页数： | 2/5页 |
| 文件大小： | 154K |
| 代理商： | 1N4756CUR-1TRE3 |
METALLURGICALLY BONDED GLASS
SURFACE MOUNT 1.0 W ZENERS
Microsemi
Scottsdale Division
Page 2
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Copyright
2005
10-18-2005 REV A
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
1N4728UR-1 thru 1N4764AUR-1,e3
(or MLL4728A-1 thru MLL4764A-1,e3)
1N4
728
AUR-1
thru
1N4
764
AUR-1
,e3
ELECTRICAL CHARACTERISTICS @ T
C
= 30oC
ZENER
VOLTAGE
(NOTE 4)
VZ
TEST
CURRENT
IZT
MAXIMUM
DYNAMIC
IMPEDANCE
(Note 2)
ZZT @ IZT
MAXIMUM
REVERSE
CURRENT
IR @ VR
TEST
VOLTAGE
VR
MAXIMUM
REGULATOR
CURRENT
TA = 50
oC
IZM
MAXIMUM
KNEE
IMPEDANCE
(NOTE2)
ZZK @ IZK
TEST
CURRENT
IZK
MAXIMUM
(SURGE)
CURRENT
(NOTE 3)
IS
TYPE
NUMBER
(NOTE 1 & 5)
Volts
mA
Ohms
μA
Volts
mA
Ohms
mA
1N4728AUR-1
1N4729AUR-1
1N4730AUR-1
1N4731AUR-1
3.3
3.6
3.9
4.3
76
69
64
58
10
9
100
50
10
1
276
252
234
217
400
1.0
1380
1260
1190
1070
1N4732AUR-1
1N4733AUR-1
1N4734AUR-1
1N4735AUR-1
4.7
5.1
5.6
6.2
53
49
45
41
8
7
5
2
10
1
2
3
193
178
162
146
500
550
600
700
1.0
970
890
810
730
1N4736AUR-1
1N4737AUR-1
1N4738AUR-1
1N4739AUR-1
6.8
7.5
8.2
9.1
37
34
31
28
3.5
4.0
4.5
5.0
10
4
5
6
7
133
121
110
100
700
1.0
0.5
660
605
550
500
1N4740AUR-1
1N4741AUR-1
1N4742AUR-1
1N4743AUR-1
10
11
12
13
25
23
21
19
7
8
9
10
5
7.6
8.4
9.1
9.9
91
83
76
69
700
0.25
454
414
380
344
1N4744AUR-1
1N4745AUR-1
1N4746AUR-1
1N4747AUR-1
15
16
18
20
17
15.5
14
12.5
14
16
20
22
5
11.4
12.2
13.7
15.2
61
57
50
45
700
750
0.25
304
285
250
225
1N4748AUR-1
1N4749AUR-1
1N4750AUR-1
1N4751AUR-1
22
24
27
30
11.5
10.5
9.5
8.5
23
25
35
40
5
16.7
18.2
20.6
22.8
41
38
34
30
750
1000
0.25
205
190
170
150
1N4752AUR-1
1N4753AUR-1
1N4754AUR-1
1N4755AUR-1
33
36
39
43
7.5
7.0
6.5
6.0
45
50
60
70
5
25.1
27.4
29.7
32.7
27
25
23
22
1000
1500
0.25
135
125
115
110
1N4756AUR-1
1N4757AUR-1
1N4758AUR-1
1N4759AUR-1
47
51
56
62
5.5
5.0
4.5
4.0
80
95
110
125
5
35.8
38.8
42.6
47.1
19
18
16
14
1500
2000
0.25
95
90
80
70
1N4760AUR-1
1N4761AUR-1
1N4762AUR-1
1N4763AUR-1
68
75
82
91
3.7
3.3
3.0
2.8
150
175
200
250
5
51.7
56.0
62.2
69.2
13
12
11
10
2000
3000
0.25
65
60
55
50
1N4764AUR-1
100
2.5
350
5
76.0
9
3000
0.25
45
NOTE 1: The type numbers shown with an “A” suffix have a +/-5% tolerance on the nominal Zener voltage. It is also available with suffix
“C” for +/-2%, and “D” for +/-1%. The absence of a suffix letter denotes +/- 10% tolerance.
NOTE 2: The Zener impedance is derived from the 60Hz ac voltage, which results when an ac current having an rms value equal to 10%
of the dc Zener current (IZT or IZK) is superimposed on IZT or IZK. Zener impedance is measured at two points to ensure a sharp
knee on the breakdown curve and eliminate unstable units.
NOTE 3: The reverse surge current is measured at 25
oC ambient using a square wave or equivalent sine wave pulse 1/120 second
duration superimposed on IZT.
NOTE 4: Voltage measurements to be performed 90 seconds after application of dc current.
NOTE 5: This product series has also been previously identified as the MLL4728A-1 thru MLL4764A-1 series. This alternate name may
still be used.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N4756E3/TR13 | 制造商:Microsemi Corporation 功能描述:1.0W, VZ = 47V, ? 10% - Tape and Reel 制造商:Microsemi Corporation 功能描述:DIODE ZENER 1.0W 47V 10% DO41 |
| 1N4756G | 功能描述:稳压二极管 1W,47V,5%,ZENER RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel |
| 1N4756G A0G | 功能描述:DIODE ZENER 47V 1W DO204AL 制造商:taiwan semiconductor corporation 系列:- 包装:带盒（TB） 零件状态:在售 电压 - 齐纳（标称值）（Vz）:47V 容差:±5% 功率 - 最大值:1W 阻抗（最大值）（Zzt）:80 Ohms 不同?Vr 时的电流 - 反向漏电流:5μA @ 35.8V 不同 If 时的电压 - 正向（Vf:1.2V @ 200mA 工作温度:-65°C ~ 200°C（TA） 安装类型:通孔 封装/外壳:DO-204AL，DO-41，轴向 供应商器件封装:DO-204AL（DO-41） 标准包装:3,000 |
| 1N4756G R0G | 功能描述:DIODE ZENER 47V 1W DO204AL 制造商:taiwan semiconductor corporation 系列:- 包装:带卷（TR） 零件状态:在售 电压 - 齐纳（标称值）（Vz）:47V 容差:±5% 功率 - 最大值:1W 阻抗（最大值）（Zzt）:80 Ohms 不同?Vr 时的电流 - 反向漏电流:5μA @ 35.8V 不同 If 时的电压 - 正向（Vf:1.2V @ 200mA 工作温度:-65°C ~ 200°C（TA） 安装类型:通孔 封装/外壳:DO-204AL，DO-41，轴向 供应商器件封装:DO-204AL（DO-41） 标准包装:5,000 |
| 1N4756P/TR12 | 制造商:Microsemi Corporation 功能描述:1.0W, VZ = 47V, ? 10% - Tape and Reel 制造商:Microsemi Corporation 功能描述:DIODE ZENER 1.0W 47V 10% DO41 |
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