参数资料
型号: 1N4791B
元件分类: 变容二极管
英文描述: 18 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
文件页数: 1/1页
文件大小: 42K
代理商: 1N4791B
相关PDF资料
PDF描述
1N4809A 33 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
1N5144 VHF-UHF BAND, 22 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
1N5441C VHF-UHF BAND, 6.8 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
1N5443CCHIP VHF-UHF BAND, 10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
1N5453BCHIP VHF-UHF BAND, 56 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
相关代理商/技术参数
参数描述
1N48 制造商:International Rectifier 功能描述:
1N480 制造商:未知厂家 制造商全称:未知厂家 功能描述:GOLD BONDED DIODES(Low forward voltage, low power consumption)
1N4800 制造商:NJSEMI 制造商全称:New Jersey Semi-Conductor Products, Inc. 功能描述:VARACTOR TUNING DIODES
1N4800A 制造商:NJSEMI 制造商全称:New Jersey Semi-Conductor Products, Inc. 功能描述:D0-7 Diode
1N4801 制造商:NJSEMI 制造商全称:New Jersey Semi-Conductor Products, Inc. 功能描述:Controlled tuning ratio with planar reliability make these diodes well suited for frequency synthesizer, VCO and related