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参数资料
| 型号： | 1N4933/64 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL |
| 封装： | PLASTIC, DO-41, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 325K |
| 代理商： | 1N4933/64 |
1N4933 thru 1N4937
Document Number 88508
10-Oct-05
Vishay General Semiconductor
www.vishay.com
1
DO-204AL (DO-41)
Fast Switching Plastic Rectifier
Major Ratings and Characteristics
IF(AV)
1.0 A
VRRM
50 V to 600 V
IFSM
30 A
trr
200 ns
IR
5.0 A
VF
1.2 V
Tj max.
150 °C
Features
Fast switching for high efficiency
Low forward voltage drop
Low leakage current
High forward surge capability
Solder Dip 260 °C, 40 seconds
Typical Applications
For use in fast switching rectification of power supply,
inverters, converters and freewheeling diodes for
consumer and Telecommunication.
(Note: These devices are not Q101 qualified. There-
fore, the devices specified in this datasheet have not
been designed for use in automotive or Hi-Rel appli-
cations.)
Mechanical Data
Case: DO-204AL, molded epoxy body
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated (E3 Suffix) leads, solder-
able per J-STD-002B and JESD22-B102D
Polarity: Color band denotes cathode end
Maximum Ratings
(TA = 25 °C unless otherwise noted)
Parameter
Symbol
1N4933
1N4934
1N4935
1N4936
1N4937
Unit
Maximum repetitive peak reverse voltage
VRRM
50
100
200
400
600
V
Maximum RMS voltage
VRMS
35
70
145
280
420
V
Maximum DC blocking voltage
VDC
50
100
200
400
600
V
Maximum average forward rectified current 0.375" (9.5 mm)
lead length at TA= 75 °C
IF(AV)
1.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
30
A
Maximum reverse recovery current (1)
IRM
2.0
A
Operating junction and storage temperature range
TJ, TSTG
- 50 to + 150
°C
相关PDF资料 |
PDF描述 |
|---|---|
| 1N4933/4F | 1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL |
| 1N4934/54 | 1 A, 100 V, SILICON, SIGNAL DIODE, DO-204AL |
| 1N4934/4H | 1 A, 100 V, SILICON, SIGNAL DIODE, DO-204AL |
| 1N4934/56 | 1 A, 100 V, SILICON, SIGNAL DIODE, DO-204AL |
| 1N4934/93 | 1 A, 100 V, SILICON, SIGNAL DIODE, DO-204AL |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N4933-A | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:1.0A FAST RECOVERY RECTIFIER |
| 1N4933-B | 功能描述:整流器 Vr/50V Io/1A BULK RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| 1N4933E | 制造商:LRC 制造商全称:Leshan Radio Company 功能描述:1A FAST RECOVERY DIODES |
| 1N4933-E3/51 | 功能描述:二极管 - 通用，功率，开关 1.0 Amp 50 Volt RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| 1N4933-E3/54 | 功能描述:二极管 - 通用，功率，开关 1.0 Amp 50 Volt RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
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